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PMEG4010ESBZ

Description
DIODE SCHOTTKY 40V 1A DSN1006-2
Categorysemiconductor    Discrete semiconductor   
File Size690KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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PMEG4010ESBZ Overview

DIODE SCHOTTKY 40V 1A DSN1006-2

PMEG4010ESBZ Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)40V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf610mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)2.9ns
Current at different Vr - Reverse leakage current40µA @ 40V
Capacitance at different Vr, F22pF @ 10V,1MHz
Installation typesurface mount
Package/casing2-XDFN
Supplier device packagingDSN1006-2
Operating Temperature - Junction150°C (maximum)
PMEG4010ESB
27 November 2015
40 V, 1 A low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
Average forward current: I
F(AV)
≤ 1 A
Reverse voltage: V
R
≤ 40 V
Low forward voltage, typical: V
F
= 510 mV
Low reverse current, typical: I
R
= 13 µA
Package height typ. 270 µm
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
I
R
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T
sp
≤ 140 °C;
square wave
T
j
= 25 °C
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
V
R
= 20 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
V
R
= 40 V; t
p
≤ 3 ms; δ ≤ 0.3 ;
T
j
= 25 °C
-
13
40
µA
-
2.1
6
µA
-
-
-
510
40
610
V
mV
Min
-
Typ
-
Max
1
Unit
A

PMEG4010ESBZ Related Products

PMEG4010ESBZ PMEG4010ESB PMEG4010ESBYL 934068754315
Description DIODE SCHOTTKY 40V 1A DSN1006-2 Rectifier Diode DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 610mV @ 1A DIODE SCHOTTKY 40V 1A DSN1006-2
Diode type Schottky RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
package instruction - R-PBCC-N2 DSN1006-2, 2 PIN R-PBCC-N2
Reach Compliance Code - compliant compliant compliant
Configuration - SINGLE SINGLE SINGLE
Diode component materials - SILICON SILICON SILICON
JESD-30 code - R-PBCC-N2 R-PBCC-N2 R-PBCC-N2
Number of components - 1 1 1
Number of terminals - 2 2 2
Maximum operating temperature - 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - CHIP CARRIER CHIP CARRIER CHIP CARRIER
Maximum power dissipation - 0.525 W 0.525 W 0.525 W
Guideline - IEC-60134 IEC-60134 IEC-60134
Maximum repetitive peak reverse voltage - 40 V 40 V 40 V
Maximum reverse recovery time - 0.0029 µs 0.0029 µs 0.0029 µs
surface mount - YES YES YES
technology - SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form - NO LEAD NO LEAD NO LEAD
Terminal location - BOTTOM BOTTOM BOTTOM
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