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1N4002G

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size213KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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1N4002G Overview

SIGNAL DIODE

1N4002G Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
DC COMPONENTS CO., LTD.
R
1N4001G
THRU
1N4007G
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 1.0 Ampere
FEATURES
*
*
*
*
*
*
High reliability
Low cost
Low leakage
Low forward voltage drop
High current capability
Glass passivated junction
DO-41
MECHANICAL DATA
*
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: MIL-STD-202E, Method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
@T
A
= 25
o
C
o
at Rated DC Blocking Voltage
@T
A
= 100 C
Maximum Full Load Reverse Current Average, Full Cycle
.375"(9.5mm) lead length at T
L
= 75
o
C
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Operating and Storage Temperature Range
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
T
J,
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.1
5.0
50
30
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
uAmps
pF
0
I
R
C
J
RθJ A
TSTG
15
50
-65 to + 175
C/ W
0
C
136

1N4002G Related Products

1N4002G 1N4001G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
Description SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
state ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE - ACTIVE
Diode type SIGNAL DIODE Signal diode Signal diode Signal diode SIGNAL DIODE - Signal diode
Number of terminals - 2 - 2 2 - 2
Number of components - 1 - 1 1 - 1
Processing package description - Plastic, DO-41, 2 PIN - PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 - PLASTIC PACKAGE-2
packaging shape - round - round ROUND - round
Package Size - LONG FORM - LONG FORM LONG FORM - LONG FORM
Terminal form - Wire - Wire WIRE - Wire
Terminal location - AXIAL - AXIAL AXIAL - AXIAL
Packaging Materials - Plastic/Epoxy - Plastic/Epoxy PLASTIC/EPOXY - Plastic/Epoxy
structure - single - single SINGLE - single
Shell connection - isolation - isolation ISOLATED - isolation
Diode component materials - silicon - silicon SILICON - silicon
Maximum repetitive peak reverse voltage - 50 V - 400 V 600 V - 1000 V
Maximum average forward current - 1 A - 1 A 1 A - 1 A
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