1N4002G datasheet, PDF - EEWORLD Datasheet

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1N4002G: DescriptionSIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size137KB，2 Pages; ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.

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1N4002G Overview

SIGNAL DIODE

1N4002G Parametric

Parameter Name	Attribute value
state	ACTIVE
Diode type	SIGNAL DIODE

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CHENYI ELECTRONICS

1N4001G THRU 1N4007G

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER

Reverse Voltage - 50 to 1300 Volts

Forward Current - 1.0Amperes

FEATURES

. The plastic package carries Underwrites Laboratory

Flammability Classification 94V-0

. High current capability

. Low reverse leakage

. Glass passivated junction

. Low forward voltage drop

. High temperature soldering guaranteed: 250 /10 seconds,

0.375"(9.5mm)lead length,5lbs.(2.3kg) tension

MECHANICAL DATA

Case:

JEDEC DO-41 molded plastic body

Terminals:

Plated axial lead solderable per MIL-STD-750,method 2026

Polarity:Color

band denotes cathode end

Mounting Position:

Any

Weight:

0.012 ounce, 0.33 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25

ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)

load. For capacitive load,derate by 20%)

Symbols 4001G 4002G 4003G 4004G 4005G 4006G 4007G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Macimum average forward rectified

current 0.375"(9.5mm)lead length at

=75

Peak forward surge current 8.3ms half

sing-wave superimposed on rated load

(JEDEC method)

Maximum instantaneous forward voltage at 1.0 A

Maximum reverse

current at rated DC blocking voltage

Typeical thermal resistance(Note 1)

Typical junction Capacitance(Note 2)

Operating and storage temperature range

TA=25

TA=100

50.0

1.1

5.0

FSM

30.0

RRM

RMS

(AV)

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

Units

Volts

Amp

Amps

Volts

50.0

25.0

15.0

-65 to +175

STG

Notes:

1. Measured at 1MHz and applied reverse voltage of 4.0V DC

2.Thermal resistance from juntion to ambient and from junction lead at 0.375"(9.5mm)lead length,

P.C.B. Mounted

Page 1 of 2

1N4002G Related Products

	1N4002G	1N4001G	1N4003G	1N4004G	1N4005G	1N4006G	1N4007G
Description	SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL	SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	SILICON, SIGNAL DIODE	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
state	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	ACTIVE	-	ACTIVE
Diode type	SIGNAL DIODE	Signal diode	Signal diode	Signal diode	SIGNAL DIODE	-	Signal diode
Number of terminals	-	2	-	2	2	-	2
Number of components	-	1	-	1	1	-	1
Processing package description	-	Plastic, DO-41, 2 PIN	-	PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2	-	PLASTIC PACKAGE-2
packaging shape	-	round	-	round	ROUND	-	round
Package Size	-	LONG FORM	-	LONG FORM	LONG FORM	-	LONG FORM
Terminal form	-	Wire	-	Wire	WIRE	-	Wire
Terminal location	-	AXIAL	-	AXIAL	AXIAL	-	AXIAL
Packaging Materials	-	Plastic/Epoxy	-	Plastic/Epoxy	PLASTIC/EPOXY	-	Plastic/Epoxy
structure	-	single	-	single	SINGLE	-	single
Shell connection	-	isolation	-	isolation	ISOLATED	-	isolation
Diode component materials	-	silicon	-	silicon	SILICON	-	silicon
Maximum repetitive peak reverse voltage	-	50 V	-	400 V	600 V	-	1000 V
Maximum average forward current	-	1 A	-	1 A	1 A	-	1 A

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