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1N4002S

Description
1 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size98KB,2 Pages
ManufacturerBytes
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1N4002S Overview

1 A, 100 V, SILICON, SIGNAL DIODE

1N4001S
1.0 AMP SILICON RECTIFIERS
THRU
1N4007S
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* Low leakage current
* High reliability
* High current capability
1.0 Ampere
A-405
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.22 grams
.205(5.2)
.166(4.2)
.025(.6)
.021(.5)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.0
5.0
50
15
50
-65
+150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
µA
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
110

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1N4002S 1N4001S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
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