1N4003 datasheet, PDF - EEWORLD Datasheet

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1N4003: Description1 A, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size178KB，2 Pages; ManufacturerGood-Ark; Websitehttp://www.goodark.com/

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1N4003 Overview

1 A, SILICON, SIGNAL DIODE, DO-41

1N4003 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	ALF-2, DO-41, 2 PIN
state	TRANSFERRED
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
Terminal location	AXIAL
Packaging Materials	Glass
structure	single
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	1 W
Diode type	Signal diode
Maximum average forward current	1 A

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1N4001 THRU 1N4007

GENERAL PURPOSE PLASTIC RECTIFIER

Reverse Voltage -

50 to 1000 Volts

Forward Current -

1.0 Ampere

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

250 /10 seconds, 0.375 (9.5mm) lead length,

5 lbs. (2.3Kg) tension

Mechanical Data

Case:

DO-41 molded plastic body

Terminals:

Plated axial leads, solderable per

MIL-STD-750, method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.012 ounce, 0.33 gram

DIM ENSIONS

DIM

inches

Min.

0.165

0.079

0.028

1.000

Max.

0.205

0.106

0.034

Min.

4.2

2.0

0.71

25.40

Max.

5.2

2.7

0.86

Note

Maximum Ratings and Electrical Characteristics

Ratings at 25

ambient temperature unless otherwise specified.

Symbols

1N4001

1N4002

1N4003

1N4004

1N4005

1N4006

1N4007

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=75

Peak forward surge current

8.3mS single half sine-wave superimposed

on rated load (MIL-STD-750D 4066 method) T

=75

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

=25

=100

RRM

RMS

(AV)

FSM

100

200

140

200

400

280

400

1.0

30.0

1.1

5.0

50.0

2.0

15.0

50.0

25.0

+150

-50 to +175

600

420

600

800

560

800

1000

700

1000

Volts

Amp

Amps

Volts

¦ÑF

Typical reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

Maximum DC blocking voltage temperature

Operating junction and storage temperature range

, T

STG

Notes:

(1) Reverse recovery test conditions: I

=0.5A, I

=1.0A, I

=0.25A

(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts

(3) Thermal resistance from junction to ambient and from junction to lead at 0.375 (9.5mm) lead length, P.C.B. mounted

1N4003 Related Products

	1N4003	1N4001	1N4004	1N4005	1N4006
Description	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	2	2	2	2
Number of components	1	1	1	1	1
Processing package description	ALF-2, DO-41, 2 PIN	MINIATURE PACKAGE-2	CASE R-1, 2 PIN	PLASTIC PACKAGE-2	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN
state	TRANSFERRED	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	round	round	round	round	ROUND
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	Wire	Wire	Wire	Wire	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	Glass	UNSPECIFIED	UNSPECIFIED	Plastic/Epoxy	PLASTIC/EPOXY
structure	single	single	single	single	SINGLE
Shell connection	isolation	isolation	isolation	isolation	ISOLATED
Diode component materials	silicon	silicon	silicon	silicon	SILICON
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	SIGNAL DIODE
Maximum average forward current	1 A	1 A	1 A	1 A	1 A
terminal coating	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	-	-	400 V	600 V	800 V

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