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1N4003

Description
1 A, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size98KB,2 Pages
ManufacturerBytes
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1N4003 Overview

1 A, SILICON, SIGNAL DIODE, DO-41

1N4003 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionALF-2, DO-41, 2 PIN
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit1 W
Diode typeSignal diode
Maximum average forward current1 A
1N4001
1.0 AMP SILICON RECTIFIERS
THRU
1N4007
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N4001
1N4002 1N4003 1N4004
1N4005 1N4006 1N4007
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.0
5.0
50
15
50
-65
+150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
µA
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
112

1N4003 Related Products

1N4003 1N4004 1N4005 1N4006 1N4007
Description 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals 2 2 2 2 2
Number of components 1 1 1 1 1
Processing package description ALF-2, DO-41, 2 PIN CASE R-1, 2 PIN PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN PLASTIC PACKAGE-2
state TRANSFERRED ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape round round round ROUND round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire WIRE Wire
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Packaging Materials Glass UNSPECIFIED Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
structure single single single SINGLE single
Shell connection isolation isolation isolation ISOLATED isolation
Diode component materials silicon silicon silicon SILICON silicon
Diode type Signal diode Signal diode Signal diode SIGNAL DIODE Signal diode
Maximum average forward current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage - 400 V 600 V 800 V 1000 V

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