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1N4003

Description
1 A, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size32KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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1N4003 Overview

1 A, SILICON, SIGNAL DIODE, DO-41

1N4003 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerComchip Technology
package instructionO-PALF-W2
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-50 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
General Purpose Plastic Rectifier
COMCHIP
www.comchiptech.com
1N4001 thru 1N4007
Reverse Voltage: 50 to 1000V
Forward Current: 1.0A
Features
- Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
- Low reverse leakage
- High forward surge capability
- High temperature soldering guaranteed: 350°C/10
Seconds, 0.375" (9.5mm) lead length
- Guardring for overvoltage protection
DO-41
1.0 (25.4)
Min.
0.107 (2.7)
0.080 (2.0)
Dia.
Mechanical Data
- Case: JEDEC DO-41 molded plastic body
- Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
- Polarity: Color band denotes cathode end
- Mounting Position: Any
- Weight: 0.012 oz., 0.3 g
- Weight: 0.34 g
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
Min.
0.034 (0.86)
0.028 (0.71)
Dia.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
= 75°C
* Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) T
A
= 75°C
* Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length T
L
= 75°C
Typical thermal resistance
(1)
* Maximum DC blocking voltage temperature
* Operating junction and storage temperature range
Symb.
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
θJA
R
θJL
T
A
T
J
, T
STG
1N
4001
50
35
50
Ratings at 25°C ambient temperature unless otherwise specified.
1N
4002
100
70
100
1N
4003
200
140
200
1N
4004
400
280
400
1.0
30
30
50
25
+150
1N
4005
600
420
600
1N
4006
800
560
800
1N
4007
1000
700
1000
Unit
V
V
V
A
A
µA
°C/W
V
°C
–50 to +175
Electrical Characteristics
* Maximum DC reverse current
at rated DC blocking voltage
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 1.0A
T
A
= 25°C
T
A
= 125°C
V
F
I
R
C
J
1.1
5.0
50
15
*JEDEC registered values
V
µA
pF
Typical junction capacitance at 4.0V, 1MHz
Note:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
MDS0312002A
Page 1

1N4003 Related Products

1N4003 1N4001 1N4002 1N4004 1N4005 1N4006 1N4007
Description 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant compli compliant compliant compliant compliant compliant
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 400 V 600 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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