This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SA0794
(2SA794)
, 2SA0794A
(2SA794A)
Silicon PNP epitaxial planar type
For low-frequency output driver
Complementary to 2SC1567, 2SC1567A
φ
3.16
±0.1
3.8
±0.3
Unit: mm
8.0
+0.5
–0.1
3.2
±0.2
M
ain
Di
sc te
on na
tin nc
ue e/
d
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
11.0
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
2SA0794
2SA0794A
Collector-emitter voltage 2SA0794
(Base open)
2SA0794A
Emitter-base voltage (Collector open)
Collector current
V
EBO
I
C
I
CP
P
C
T
j
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
isc
Parameter
on
tin
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CEO
Collector-emitter voltage
(Base open)
2SA0794
ce
2SA0794A
Emitter-base voltage (Collector open)
V
EBO
h
FE2
Forward current transfer ratio
h
FE1 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 220
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Rating
−100
−120
−100
−120
−5
−1
Unit
V
0.75
±0.1
0.5
±0.1
16.0
±1.0
1.9
±0.1
4.6
±0.2
0.5
±0.1
1.76
±0.1
2.3
±0.2
1
2
3
V
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
V
−
0.5
1.2
A
A
W
150
°C
−55
to
+150
°C
ue
Conditions
Min
Typ
Max
/D
I
C
= −100 µA,
I
B
=
0
I
E
= −1 µA,
I
C
=
0
−100
−120
−5
90
50
an
Ma
int
en
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −5
V, I
C
= −500
mA
I
C
= −500
mA, I
B
= −50
mA
I
C
= −500
mA, I
B
= −50
mA
220
100
−
0.2
120
20
−
0.4
−
0.85
−1.20
30
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
MHz
pF
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00001BED
3.05
±0.1
Unit
V
V
V
V
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA0794, 2SA0794A
P
C
T
a
1.6
−1.2
I
C
V
CE
T
C
=
25°C
−18
mA I
B
= −20
mA
−16
mA
−14
mA
−12
mA
−10
mA
−8
mA
−6
mA
−4
mA
−2
mA
I
C
I
B
−1.2
V
CE
= −10
V
T
C
=
25°C
Collector power dissipation P
C
(W)
−1.0
−1.0
Collector current I
C
(A)
−
0.8
0.8
−
0.6
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
I
C
V
BE
−
0.5
T
a
=
125°C
75°C
−25°C
Base-emitter saturation voltage V
BE(sat)
(V)
V
CE
= −10
V
Collector-emitter saturation voltage V
CE(sat)
(V)
−
0.6
−
0.4
−
0.3
−
0.2
−
0.1
0
ue
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−
0.01
−
0.01
/D
h
FE
I
C
isc
on
tin
Base-emitter voltage V
BE
(V)
Forward current transfer ratio h
FE
Ma
int
en
an
V
CE
= −10
V
Transition frequency f
T
(MHz)
V
CB
= −10
V
f
=
200 MHz
T
C
=
25°C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
1 000
T
C
=
100°C
25°C
100
−25°C
10
−
0.01
−
0.1
−1
Collector current I
C
(A)
2
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0
0
−2
−4
−6
−8
−10
−12
M
ain
Di
sc te
on na
tin nc
ue e/
d
−
0.4
0.4
−
0.2
Collector current I
C
(A)
1.2
−
0.8
−
0.6
−
0.4
−
0.2
0
0
−2
−4
−6
−8 −10 −12 −14
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
V
BE(sat)
I
C
I
C
/ I
B
=
10
I
C
/ I
B
=
10
Collector current I
C
(A)
−1
−1
T
C
= −25°C
100°C
25°C
T
C
=
100°C
25°C
−
0.1
−25°C
−
0.1
−
0.1
−1
−
0.01
−
0.01
−
0.1
−1
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
C
ob
V
CB
ce
200
50
160
I
E
=
0
f
=
1 MHz
T
C
=
25°C
40
120
30
80
20
40
10
0
1
10
100
0
−1
−10
−100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
SJD00001BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
京公网安备 11010802033920号
EEWORLD
