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PDTC114ET/T4

Description
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size711KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PDTC114ET/T4 Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

PDTC114ET/T4 Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-based maximum capacity3.5 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V
Base Number Matches1
PDTC114E series
NPN resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 12 — 21 December 2011
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
PDTC114EE
PDTC114EM
PDTC114ET
PDTC114EU
SOT416
SOT883
SOT23
SOT323
JEITA
SC-75
SC-101
-
SC-70
JEDEC
-
-
-
PNP
complement
PDTA114EE
PDTA114EM
PDTA114EU
Package
configuration
ultra small
leadless ultra small
small
very small
Type number
TO-236AB PDTA114ET
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Digital application in automotive and
industrial segments
Control of IC inputs
Cost-saving alternative for BC847/857
series in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
7
0.8
Typ
-
-
10
1.0
Max
50
100
13
1.2
Unit
V
mA
k

PDTC114ET/T4 Related Products

PDTC114ET/T4 PDTC114ET/T3 934062892115 PDTC114EU/T4 PDTC114EU-T PDTC114EE-T PDTC114ET-T
Description TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30 30 30 30 30 30
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
surface mount YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Parts packaging code SOT-23 SOT-23 - SC-70 SC-70 SC-75 SOT-23
Contacts 3 3 - 3 3 3 3
Maximum operating temperature 150 °C 150 °C - - - 150 °C 150 °C
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified
Base Number Matches 1 1 1 1 1 - -
Maker - - NXP NXP - NXP NXP
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