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FDA62N28

Description
MOSFET N-CH 280V 62A TO-3P
Categorysemiconductor    Discrete semiconductor   
File Size442KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDA62N28 Overview

MOSFET N-CH 280V 62A TO-3P

FDA62N28 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)280V
Current - Continuous Drain (Id) at 25°C62A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs51 milliohms @ 31A, 10V
Vgs (th) (maximum value) when different Id5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)100nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)4630pF @ 25V
FET function-
Power dissipation (maximum)500W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-3PN
Package/casingTO-3P-3,SC-65-3
FDA62N28 280V N-Channel MOSFET
UniFET
FDA62N28
280V N-Channel MOSFET
Features
• 62A, 280V, R
DS(on)
= 0.051Ω @V
GS
= 10 V
• Low gate charge ( typical 77 nC)
• Low C
rss
( typical 83 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
!
"
G
!
! "
"
"
TO-3PN
G DS
FDA Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDA62N28
280
62
37
248
±30
1919
62
50
4.5
500
4
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.25
--
40
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDA62N28 Rev. A

FDA62N28 Related Products

FDA62N28
Description MOSFET N-CH 280V 62A TO-3P
FET type N channel
technology MOSFET (metal oxide)
Drain-source voltage (Vdss) 280V
Current - Continuous Drain (Id) at 25°C 62A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V
Rds On (maximum value) when different Id, Vgs 51 milliohms @ 31A, 10V
Vgs (th) (maximum value) when different Id 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 100nC @ 10V
Vgs (maximum value) ±30V
Input capacitance (Ciss) at different Vds (maximum value) 4630pF @ 25V
Power dissipation (maximum) 500W(Tc)
Operating temperature -55°C ~ 150°C(TJ)
Installation type Through hole
Supplier device packaging TO-3PN
Package/casing TO-3P-3,SC-65-3
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