FDA79N15 150V N-Channel MOSFET
UniFET
FDA79N15
150V N-Channel MOSFET
Features
• 79A, 150V, R
DS(on)
= 0.03Ω @V
GS
= 10 V
• Low gate charge ( typical 56 nC)
• Low C
rss
( typical 96 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
TO-3PN
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDA79N15
150
79
50
316
±30
1669
79
41.7
4.5
417
3.3
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.3
--
40
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDA79N15 Rev. A
FDA79N15 150V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDA79N15
Device
FDA79N15
Package
TO-3PN
T
C
= 25°C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Conditions
V
GS
= 0V, I
D
= 250µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, T
C
= 125°C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 39.5A
V
DS
= 40V, I
D
= 39.5A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
(Note 4)
Min.
150
--
--
--
--
--
3.0
--
--
--
--
--
Typ.
--
0.15
--
--
--
--
--
0.025
46
2620
730
96
50
200
55
38
56
18
21
Max Units
--
--
1
10
100
-100
5.0
0.03
--
3410
950
140
112
410
120
85
73
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 75V, I
D
= 79A
R
G
= 25Ω
(Note 4, 5)
--
--
--
--
--
--
(Note 4, 5)
V
DS
= 120V, I
D
= 79A
V
GS
= 10V
--
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 79A
V
GS
= 0V, I
S
= 79A
dI
F
/dt =100A/µs
(Note 4)
--
--
--
--
--
--
--
--
136
2.1
79
316
1.4
--
--
A
A
V
ns
µC
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.357mH, I
AS
= 79A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
79A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDA79N15 Rev. A
2
www.fairchildsemi.com
FDA79N15 150V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
10
2
150 C
10
1
o
10
1
25 C
-55 C
※
Notes :
1. V
DS
= 40V
2. 250µ s Pulse Test
o
o
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
10
-1
10
0
10
0
10
1
10
0
2
4
6
8
10
12
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.07
R
DS(ON)
[Ω ],Drain-Source On-Resistance
I
DR
, Reverse Drain Current [A]
0.06
10
2
0.05
V
GS
= 10V
0.04
10
1
150
℃
25
℃
0.03
V
GS
= 20V
※
Note : T
J
= 25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
0.02
0
25
50
75
100
125
150
175
200
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
6000
Figure 6. Gate Charge Characteristics
12
V
GS
, Gate-Source Voltage [V]
5000
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
10
V
DS
= 30V
V
DS
= 75V
V
DS
= 120V
Capacitances [pF]
4000
C
iss
8
3000
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
6
2000
4
C
rss
1000
2
※
Note : I
D
= 79A
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
60
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FDA79N15 Rev. A
3
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FDA79N15 150V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
3.0
Figure 8. On-Resistance Variation
vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 34.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µ A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
90
10
3
10
µ
s
10
2
80
70
100
µ
s
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
1
DC
Operation in This Area
is Limited by R
DS(on)
1 ms
10 ms
100 ms
60
50
40
30
20
10
0
25
10
0
※
Notes :
10
-1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-2
10
0
10
1
10
2
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 11. Transient Thermal Response Curve
Z
θ
JC
Thermal Response
(t),
D = 0 .5
10
-1
0 .2
0 .1
0 .0 5
0 .0 2
10
-2
0 .0 1
s in g le p u ls e
10
-4
※
N o te s :
1 . Z
θ
J C
t) = 0 .3
℃
/W M a x .
(
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
t)
(
10
-5
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u ra tio n [s e c ]
FDA79N15 Rev. A
4
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FDA79N15 150V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
R
G
V
GS
R
L
V
DD
V
DS
90%
10V
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
10V
t
p
BV
DSS
1
2
--------------------
E
AS
= ---- L I
AS
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
FDA79N15 Rev. A
5
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