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FDAF69N25

Description
MOSFET N-CH 250V 34A TO-3PF
Categorysemiconductor    Discrete semiconductor   
File Size571KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

FDAF69N25 Overview

MOSFET N-CH 250V 34A TO-3PF

FDAF69N25 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)250V
Current - Continuous Drain (Id) at 25°C34A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs41 milliohms @ 17A, 10V
Vgs (th) (maximum value) when different Id5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)100nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)4640pF @ 25V
FET function-
Power dissipation (maximum)115W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-3PF
Package/casingSC-94
FDAF69N25 250V N-Channel MOSFET
September 2005
UniFET
FDAF69N25
250V N-Channel MOSFET
Features
• 34A, 250V, R
DS(on)
= 0.041Ω @V
GS
= 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 84 pF)
• Fast switching
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switching DC/DC converters and switched mode power
supplies.
D
G
G D S
TO-3PF
FQAF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DS(Avalanche)
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Repetitive Avalanche Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
(Note 2)
Parameter
FDAF69N25
250
300
34
21.5
(Note 1)
Unit
V
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
136
±30
1894
34
11.5
4.5
115
0.93
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
1.08
--
40
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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