FDD6680/FDU6680
November 2004
FDD6680 / FDU6680
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Features
•
46 A, 30 V
R
DS(ON)
= 10 mΩ @ V
GS
= 10 V
R
DS(ON)
= 15 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast Switching Speed
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
D
G
S
I-PAK
(TO-251AA)
G D S
G
D-PAK
TO-252
(TO-252)
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
±20
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Units
V
V
A
Continuous Drain Current @T
C
=25°C
@T
A
=25°C
Pulsed
46
12
100
56
3.3
1.5
–55 to +175
P
D
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.7
45
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD6680
FDU6680
Device
FDD6680
FDU6680
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
©2004
Fairchild Semiconductor Corporation
FDD6680/FDU6680 Rev. C1(W)
FDD6680/FDU6680
Electrical Characteristics
Symbol
E
AS
I
AS
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Test Conditions
Single Pulse, V
DD
= 25 V, I
D
= 12A
Min
Typ
Max Units
180
12
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
V
GS
= 0 V,
I
D
= 250
µA
30
24
1
±100
V
mV/°C
µA
nA
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
V
GS
= 10 V,
I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 12 A,T
J
=125°C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 12 A
1
1.9
–5
7.7
9.9
11.4
3
V
mV/°C
mΩ
10
15
16
I
D(on)
g
FS
50
47
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
1230
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
325
150
f = 1.0 MHz
1.5
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
7
29
12
13
V
DS
= 15V,
V
GS
= 5 V
I
D
= 12 A,
3.5
5.1
19
13
46
21
18
ns
ns
ns
ns
nC
nC
nC
FDD6680/FDU6680 Rev. C1(W)
FDD6680/FDU6680
Electrical Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
2.3
A
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 12 A,
I
S
= 2.3 A
(Note 2)
d
iF
/d
t
= 100 A/µs
0.76
24
13
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 45°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
θJA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
P
D
R
DS(ON)
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD6680/FDU6680 Rev. C1(W)
FDD6680/FDU6680
Typical Characteristics
100
1.8
V
GS
= 10.0V
6.0V
4.5V
5.0V
4.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.5V
1.6
80
I
D
, DRAIN CURRENT (A)
60
1.4
4.0V
4.5V
5.0V
6.0V
3.5V
40
1.2
1
10.0V
20
3.0V
0.8
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0
20
40
I
D
, DRAIN CURRENT (A)
60
80
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.03
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 12A
V
GS
= 10V
1.4
R
DS(ON)
, ON-RESISTANCE (OHM)
0.025
I
D
= 6A
1.2
0.02
T
A
= 125 C
0.015
o
1
T
A
= 25
o
C
0.01
0.8
0.6
-50
-25
0
25
50
75
100
o
T
J
, JUNCTION TEMPERATURE ( C)
125
150
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
I
S
, REVERSE DRAIN CURRENT (A)
90
V
DS
= 5V
75
I
D
, DRAIN CURRENT (A)
60
45
30
15
0
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
4.5
25
o
C
T
A
=-55
o
C
125 C
o
V
GS
= 0V
100
10
1
0.1
0.01
0.001
o
T
A
= 125 C
25
o
C
-55
o
C
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6680/FDU6680 Rev. C1(W)
FDD6680/FDU6680
Typical Characteristics
10
1800
I
D
= 12 A
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= 10V
20V
CAPACITANCE (pF)
f = 1MHz
V
GS
= 0 V
1500
C
iss
1200
6
15V
900
4
600
C
oss
300
2
C
rss
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
1000
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics
100
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
1ms
10ms
100µs
80
SINGLE PULSE
R
θJA
= 96°C/W
T
A
= 25°C
10
1s
10
1
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 96
o
C/W
T
A
= 25
o
C
DC
100ms
60
40
0.1
20
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.01
0.001
SINGLE PULSE
0.0001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6680/FDU6680 Rev. C1(W)
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