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FDMB506P

Description
MOSFET P-CH 20V 6.8A 8MICROFET
Categorysemiconductor    Discrete semiconductor   
File Size211KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDMB506P Overview

MOSFET P-CH 20V 6.8A 8MICROFET

FDMB506P Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C6.8A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)1.8V,4.5V
Rds On (maximum value) when different Id, Vgs30 milliohms @ 6.8A, 4.5V
Vgs (th) (maximum value) when different Id1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)30nC @ 4.5V
Vgs (maximum value)±8V
Input capacitance (Ciss) at different Vds (maximum value)2960pF @ 10V
FET function-
Power dissipation (maximum)1.9W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packaging8-MLP,MicroFET(3x1.9)
Package/casing8-PowerWDFN
FDMB506P
December 2005
FDMB506P
P-Channel 1.8V Logic Level PowerTrench
MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices are
well suited for portable electronics applications.
Features
–6.8 A, –20V. R
DS(ON)
= 30 mΩ @ V
GS
= –4.5V
R
DS(ON)
= 38 mΩ @ V
GS
= –2.5V
R
DS(ON)
= 70 mΩ @ V
GS
= –1.8V
Low profile – 0.8 mm maximum
Fast switching
Applications
Load switch
DC/DC Conversion
RoHS compliant
PIN 1
GATE
S
D
SOURCE
5
6
7
8
4
3
2
1
G
D
D
D
D
D
MicroFET
3x1.9
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
W
°C
–6.8
70
1.9
–55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
65
208
°C/W
Package Marking and Ordering Information
Device Marking
506
Device
FDMB506P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2005 Fairchild Semiconductor Corporation
FDMB506P Rev C2(W)
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