FDP5680/FDB5680
July 2000
FDP5680/FDB5680
General Description
60V N-Channel PowerTrench
TM
MOSFET
Features
40 A, 60 V. R
DS(ON)
= 0.020
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.023
Ω
@ V
GS
= 6 V.
Critical DC electrical parameters specified at evevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High performance trend technology for
extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
D
D
G
G
D
TO-220
S
FDP Series
G
S
T
C
= 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Parameter
FDP5680
60
±20
40
120
65
0.43
FDB5680
Units
V
V
A
W
W/°C
°C
- Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
-65 to +175
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.3
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB5680
FDP5680
Device
FDB5680
FDP5680
Reel Size
13’’
Tube
Tape Width
24mm
N/A
Quantity
800
45
2000
Fairchild Semiconductor International
FDP5680/FDB5680 Rev. C
FDP5680/FDB5680
Electrical Characteristics
Symbol
W
DSS
I
AR
T
c
= 25°C unless otherwise noted
Parameter
(Note1)
Test Conditions
Min
Typ
Max
90
40
Units
mJ
A
Drain-Source Avalanche Ratings
Single Pulse Drain-Source
V
DD
= 30 V, I
D
= 40A
Avalanche Energy
Maximum Drain-Source Avalanche Current
Off Characteristics
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250
µ
A
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 1)
60
60
1
100
-100
V
mV/
°
C
µ
A
nA
nA
I
D
= -250
µ
A, Referenced to 25
°
C
V
DS
= 48 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 20 A,
V
GS
= 10 V, I
D
= 20 A,T
J
= 125
°
C
V
GS
= 6 V, I
D
= 19 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 20 A
2
2.5
-6.4
0.016
0.022
0.018
4
V
mV/
°
C
0.020
0.035
0.023
Ω
I
D(on)
g
FS
20
43
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 1)
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
1850
230
95
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
15
9
35
16
27
18
56
26
46
ns
ns
ns
ns
nC
nC
nC
V
DS
= 30 V, I
D
= 20 A
V
GS
= 10 V
33
6.5
7.5
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 20 A
(Note 1)
(Note 1)
40
0.9
1.2
A
V
Note:
1.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDP5680/FDB5680 Rev. C
FDP5680/FDB5680
Typical Characteristics
80
70
60
50
40
30
20
10
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4.0V
4.5V
2.2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 10V
6.0V
5.0V
2
1.8
1.6
1.4
1.2
1
0.8
0
10
20
30
40
50
60
70
80
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
4.5V
5.0V
6.0V
7.0V
10V
Figure 1. On-Region Characteristics.
2
0.05
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
I
D
= 20A
0.04
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
R
DS(ON)
, ON-RESISTANCE (OHM)
1.8
I
D
= 20A
V
GS
= 10V
0.03
T
A
= 125
o
C
0.02
T
A
= 25
o
C
0.01
-25
0
25
50
75
100
125
150
0
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. On-Resistance Variation
with Temperature.
60
50
25
o
C
125 C
40
30
20
10
0
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
T
A
= -55 C
o
V
GS
= 0V
10
T
A
= 125 C
1
25 C
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-55 C
o
o
o
I
D
, DRAIN CURRENT (A)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP5680/FDB5680 Rev. C
FDP5680/FDB5680
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 20A
8
(continued)
2500
V
DS
= 10V
30V
20V
2000
f = 1MHz
V
GS
= 0 V
6
CAPACITANCE (pF)
C
ISS
1500
4
1000
2
500
C
OSS
C
RSS
0
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
0
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
1000
Figure 8. Capacitance Characteristics.
1500
SINGLE PULSE
o
R
θJC
= 2.3 C/W
T
C
= 25 C
POWER (W)
o
I
D
DRAIN CURRENT (A)
100
1ms
RDS(ON) LIMIT
1s
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θJC
= 2.3
o
C/W
T
C
= 25 C
o
1200
10ms
100ms
900
10
600
1
300
0.1
0.1
1
10
100
0
0.0001
0.001
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.3
D = 0.5
(t), NORMALIZED EFFECTIVE
0.2
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
=2.3 °C/W
P(pk)
0.2
0.1
0.1
0.05
0.02
t
1
t
2
θ
0.05
0.03
0.1
Single Pulse
r
T
J
- T
C
= P * RJC (t)
Duty Cycle, D = t
1
/t
2
0.5
1
10
t
1
,TIME (ms)
100
1000
3000
10000
Figure 11. Transient Thermal Response Curve.
FDP5680/FDB5680 Rev. C
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration:
Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith anti-
static bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.
45 unit s per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bag s per Box
Conduct ive Plasti c B ag
TO-220 Packaging
Information:
Figure 2.0
TO-220 Packaging Information
Packaging Option
Packaging type
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Note/Comments
Standard
(no f l ow code )
FSCINT Labe l samp le
FAIRCHILD SEMICONDUCTOR CORPORATION
1080 uni ts maxi mum
quant it y per bo x
S62Z
BULK
300
LOT:
CBVK741B019
QTY:
HTB:B
1080
NSID:
FDP7060
SPEC:
Rail/Tube
45
530x130x83
1,080
1.4378
D/C1:
D9842
SPEC REV:
QA REV:
B2
114x102x51
1,500
1.4378
FSCINT Label
(FSCINT)
TO-220 bulk Packing
Configuration:
Figure 3.0
FSCINT Label
An ti-stati c
Bubbl e Sheet s
530mm x 130mm x 83mm
Intermediate box
1500 uni ts maxi mum
quant it y per intermediate box
300 units per
EO70 box
114mm x 102mm x 51mm
EO70 Immed iate Box
5 EO70 boxe s per per
Interm ediate Bo x
FSCINT Label
TO-220 Tube
Configuration:
Figure 4.0
Note: All dim ensions are in inches
0.123
+0.001
-0.003
0.165
0.080
0.450
±.030
1.300
±.015
0.032
±.003
0.275
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
0.160
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
Power technology
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