FDP7N50F / FDPF7N50F N-Channel MOSFET
November 2007
UniFET
TM
FDP7N50F / FDPF7N50F
N-Channel MOSFET, FRFET
500V, 6A, 1.15Ω
Features
• R
DS(on)
= 0.95Ω ( Typ.)@ V
GS
= 10V, I
D
= 3A
• Low gate charge ( Typ. 15nC)
• Low C
rss
( Typ. 6.3pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
C
Parameter
FDP7N50F
500
±30
FDPF7N50F
Units
V
V
-Continuous (T
C
=
-Continuous (T
C
=
- Pulsed
25
o
C)
100
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
6
3.6
24
270
6
20
4.5
200
1.59
-55 to +150
300
6*
3.6*
24*
A
A
mJ
A
mJ
V/ns
38.5
0.3
W
W/
o
C
o
- Derate above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
FDP7N50F
1.4
0.5
62.5
FDPF7N50F
4.0
-
62.5
o
C/W
Units
©2007 Fairchild Semiconductor Corporation
FDP7N50F / FDPF7N50F Rev. A
1
www.fairchildsemi.com
FDP7N50F / FDPF7N50F N-Channel MOSFET
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
FDP7N50F
FDPF7N50F
Device
FDP7N50F
FDPF7N50F
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250µA, V
GS
= 0V, T
J
= 25
o
C
I
D
= 250µA, Referenced to 25
o
C
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125 C
V
GS
= ±30V, V
DS
= 0V
o
500
-
-
-
-
-
0.5
-
-
-
-
-
10
100
±100
V
V/
o
C
µA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 3A
V
DS
= 40V, I
D
= 3A
(Note 4)
3.0
-
-
-
0.95
4.3
5.0
1.15
-
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 400V, I
D
= 6A
V
GS
= 10V
(Note 4, 5)
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
-
720
85
6.3
15
4.5
6
960
115
10
20
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 250V, I
D
= 6A
R
G
= 25Ω
(Note 4, 5)
-
-
-
-
17
30
35
20
45
70
80
50
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 6A
V
GS
= 0V, I
SD
= 6A
dI
F
/dt = 100A/µs
(Note 4)
-
-
-
-
-
-
-
-
85
0.15
6
24
1.5
-
-
A
A
V
ns
µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 13mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
6A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP7N50F / FDPF7N50F Rev. A
2
www.fairchildsemi.com
FDP7N50F / FDPF7N50F N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
28
V
GS
=
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Figure 2. Transfer Characteristics
20
10
I
D
,Drain Current[A]
10
I
D
,Drain Current[A]
150 C
o
25 C
o
1
0.1
0.04
0.1
*Notes:
1. 250
µ
s Pulse Test
2. T
C
= 25 C
o
*Notes:
1. V
DS
= 20V
2. 250
µ
s Pulse Test
1
V
DS
,Drain-Source Voltage[V]
10
20
1
5
6
7
8
9
V
GS
,Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.4
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
R
DS(ON)
[
Ω
]
,
Drain-Source On-Resistance
I
S
, Reverse Drain Current [A]
1.8
10
150 C
o
25 C
o
V
GS
= 10V
1.2
V
GS
= 20V
1
*Notes:
1. V
GS
= 0V
0.6
0
4
*Note: T
J
= 25 C
o
8
12
I
D
, Drain Current [A]
16
0.1
0.0
2. 250
µ
s Pulse Test
0.5
1.0
1.5
V
SD
, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
1500
C
oss
Ciss = Cgs + Cgd
(
Cds = shorted
)
Coss = Cds + Cgd
Crss = Cgd
Figure 6. Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
1200
C
iss
8
Capacitances [pF]
900
*Note:
1. V
GS
= 0V
2. f = 1MHz
6
600
C
rss
4
300
2
*Note: I
D
= 6A
0
0.1
0
1
10
V
DS
, Drain-Source Voltage [V]
30
0
4
8
12
Q
g
, Total Gate Charge [nC]
16
FDP7N50F / FDPF7N50F Rev. A
3
www.fairchildsemi.com
FDP7N50F / FDPF7N50F N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. Maximum Safe Operating Area
- FDPF7N50F
50
10
µ
s
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
1.1
I
D
, Drain Current [A]
10
100
µ
s
1ms
10ms
100ms
1.0
1
Operation in This Area
is Limited by R
DS(on)
DC
0.9
*Notes:
1. V
GS
= 0V
2. I
D
= 250
µ
A
0.1
*Notes:
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.8
-100
-50
0
50
100
150
o
T
J
, Junction Temperature
[
C
]
200
0.01
1
10
100
V
DS
, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
vs. Case Temperature - FDPF7N50F
6.0
4.8
I
D
, Drain Current [A]
3.6
2.4
1.2
0.0
25
50
75
100
o
125
T
C
, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDPF7N50F
10
1
Z
θ
JC
(t), Thermal Response
D=0.5
10
0
0.2
0.1
0.05
P
DM
P
DM
t
1
* Notes :
10
-1
0.02
0.01
t
1
t
2
o
t
2
10
-2
-5
single pulse
10
-4
1. Z
θ
JC
(t) = 4.0 C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
10
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
FDP7N50F / FDPF7N50F Rev. A
4
www.fairchildsemi.com
FDP7N50F / FDPF7N50F N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N50F / FDPF7N50F Rev. A
5
www.fairchildsemi.com
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