specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
5.2 A, 100 V. R
DS(ON)
= 0.043
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.048
Ω
@ V
GS
= 6 V.
•
Low gate charge.
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
.
•
High power and current handling capability.
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
100
±20
(Note 1a)
Units
V
V
A
W
5.2
50
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS3680
Device
FDS3680
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS3680 Rev B1 (W)
1999
Fairchild Semiconductor Corporation
FDS3680
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage Current,
Forward
Gate–Body Leakage Current,
Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
100
Typ
Max Units
V
Off Characteristics
101
25
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,Referenced
to 25°C
V
GS
= 10 V,
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 5.2 A
I
D
= 5.2 A
T
J
=125°C
I
D
= 4.5 A
V
DS
= 5 V
I
D
= 5.2 A
2
2.4
–6.5
0.032
0.061
0.034
4
V
mV/°C
0.043
0.086
0.048
Ω
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
25
25
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
1735
176
53
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 10
Ω
14
8.5
63
21
25
17
94
34
53
ns
ns
ns
ns
nC
nC
nC
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 6 A,
38
8.1
9.2
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
2.1
0.73
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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