Drain–Source Diode Characteristics and Maximum Ratings
V
SD
t
rr
Q
rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.7
39
33
1.2
V
nS
nC
I
F
= 18 A,
d
iF
/d
t
= 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS7788 Rev F1 (W)
FDS7788
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