FFPF60SB60DS
March 2008
STEALTH
TM
II Rectifier
FFPF60SB60DS
Features
• High Speed Switching, t
rr
< 25ns @ I
F
= 4A
• High Reverse Voltage and High Reliability
• RoHS compliant
tm
4A, 600V STEALTH
TM
II Rectifier
The FFPF60SB60DS is STEALTH
TM
II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
1 2 3
TO220F
1. Cathode 2. Anode(Cathode) 3. Anode
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range
@ T
C
= 100 C
o
Parameter
Ratings
600
600
600
4
40
-65 to +150
Units
V
V
V
A
A
o
C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
Ratings
8.7
Units
o
C/W
Package Marking and Ordering Information
Device Marking
FFPF60SB60DS
Device
FFPF60SB60DSTU
Package
TO220F
Reel Size
-
Tape Width
-
Quantity
50
©2008 Fairchild Semiconductor Corporation
FFPF60SB60DS Rev. A
1
www.fairchildsemi.com
FFPF60SB60DS
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
50
Figure 2. Typical Reverse Current
vs. Reverse Voltage
40
10
Forward Current, I
F
[A]
T
C
= 125 C
o
10
Reverse Current , I
R
[
µ
A
]
T
C
= 125 C
o
75 C
25 C
o
o
1
T
C
= 75 C
o
1
0.1
0.01
T
C
= 25 C
o
0.1
0
1
2
3
4
Forward Voltage, V
F
[V]
5
1E-3
10
100
200
300
400
Reverse Voltage, V
R
[V]
500
600
Figure 3. Typical Junction Capacitance
50
Reverse Recovery Time, t
rr
[ns]
Typical Capacitance
at 0V = 43 pF
Figure 4. Typical Reverse Recovery Time
vs. di/dt
60
40
Capacitances , Cj [pF]
50
30
40
T
C
= 125 C
o
20
30
T
C
= 75 C
o
10
20
T
C
= 25 C
o
0
0.1
1
10
Reverse Voltage, V
R
[V]
100
10
100
200
300
400
di/dt
[
A/
µ
s
]
500
600
Figure 5. Typical Reverse Recovery
Current vs. di/dt
7
6
5
T
C
= 125 C
o
Figure 6. Forward Current Derating Curve
9
Average Forward Current, I
F(AV)
[A]
Reverse Recovery Current, I
rr
[A]
6
4
3
2
1
100
T
C
= 25 C
o
T
C
= 75 C
o
3
200
300
400
di/dt
[
A/
µ
s
]
500
600
0
25
50
75
100
125
o
Case temperature, T
C
[
C
]
150
FFPF60SB60DS Rev. A
3
www.fairchildsemi.com
FFPF60SB60DS
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx
®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EZSWITCH™ *
™
®
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
FAST
®
FastvCore™
FlashWriter
®
*
tm
FPS™
FRFET
®
Global Power Resource
SM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC
®
OPTOPLANAR
®
®
tm
PDP-SPM™
Power220
®
POWEREDGE
®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise
®
tm
TinyBoost™
TinyBuck™
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®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC
®
Ultra FRFET™
UniFET™
VCX™
* EZSWITCH™ and FlashWriter
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
2.
A critical component in any component of a life support, device
or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I33
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FFPF60SB60DS Rev. A
5
www.fairchildsemi.com
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