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FGPF30N30TDTU

Description
IGBT 300V 44.6W TO220F
Categorysemiconductor    Discrete semiconductor   
File Size629KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FGPF30N30TDTU Overview

IGBT 300V 44.6W TO220F

FGPF30N30TDTU Parametric

Parameter NameAttribute value
IGBT typechannel
Voltage - collector-emitter breakdown (maximum)300V
Pulse current - collector (Icm)80A
Vce(on) when different Vge,Ic1.5V @ 15V,10A
Power - Max44.6W
switching energy-
input typestandard
gate charge65nC
Td (on/off) value at 25°C22ns/130ns
Test Conditions200V, 20A, 20 ohms, 15V
Reverse recovery time (trr)22ns
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-220-3 whole package
Supplier device packagingTO-220F
FGPF30N30TD 300V, 30A PDP Trench IGBT
September 2007
FGPF30N30TD
300V, 30A PDP Trench IGBT
Features
• High current capability
• Low saturation voltage: V
CE(sat)
=1.4V @ I
C
= 20A
• High input impedance
• Fast switching
• RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Applications
• PDP System
C
TO-220F
1
1.Gate
2.Collector
3.Emitter
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C pulse (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
=
25
o
C
Ratings
300
±
30
80
10
40
44.6
17.8
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
o
o
@ T
C
= 100°C
C
C
o
C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Notes :
(1) Repetitive tese, Pulse width = 100usec, Duty = 0.1
* Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction to Ambient
Typ.
-
--
-
Max.
2.8
3.0
62.5
Units
o
C/W
o
C/W
o
C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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