FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
August 2006
FKN08PN60
TRIAC (Silicon Bidirectional Thyristor)
Application Explanation
•
•
•
•
Switching mode power supply, light dimmer, electric flasher unit, hair drier
TV sets, stereo, refrigerator, washing machine
Electric blanket, solenoid driver, small motor control
Photo copier, electric tool
tm
3
1: T
1
2: Gate
3: T
2
2
TO-92
1 2 3
1
Absolute Maximum Ratings
Symbol
V
DRM
V
RRM
I
T (RMS)
I
TSM
T
a
= 25°C unless otherwise noted
Parameter
Peak Repetitive Off-State Voltage
RMS On-State Current
Surge On-State Current
Value
Sine Wave 50 to 60Hz, Gate Open
Commercial frequency, sine full wave
360q conduction, Tc= 70
Sinewave 1 full cycle, peak value,
non-repetitive
50Hz
60Hz
Rating
600
0.8
8
9
0.33
5
0.1
5
1
- 40 ~ 125
- 40 ~ 125
Units
V
A
A
A
A
2
s
W
W
V
A
qC
qC
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
T
J
T
STG
I
2
t for Fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=8.4ms
Thermal Characteristics
Symbol
R
TJC
R
TJA
Parameter
Thermal Resistance, Junction to Case
(note1)
Thermal Resistance, Junction to Ambient
(note2)
Value
40
160
Units
qC/W
qC/W
Note1: Infinite cooling condition.
Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad)
©2006 Fairchild Semiconductor Corporation
1
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FKN08PN60 Rev. A
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Electrical Characteristics
Symbol
I
DRM
I
RRM
V
TM
T
C
= 25°C unless otherwise noted
Parameter
Repetieive Peak Off-State Current
On-State Voltage
I
Test Condition
V
DRM
/V
RRM
applied
T
C
=25qC, I
TM
=1.12A
Instantaneous measurement
T2(+), Gate (+)
V
D
=12V, R
L
=100:
T2(+), Gate (-)
T2(-), Gate (-)
T2(+), Gate (+)
V
D
=12V, R
L
=100:
T
J
=125qC, V
D
=1/2V
DRM
(I, II,III)
I, III
II
V
D
= 12V, I
TM
= 200mA
V
D
= 12V, I
G
= 10mA
V
DRM
= 63% Rated, T
j
= 125qC,
Exponential Rise
T2(+), Gate (-)
T2(-), Gate (-)
II
III
I
Min.
Typ.
Max.
Units
-
-
-
-
-
-
-
-
0.2
-
-
-
20
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
1.8
2.0
2.0
2.0
5
5
5
-
15
15
20
-
-
PA
V
V
V
V
mA
mA
mA
V
mA
mA
mA
V/Ps
V/Ps
V
GT
Gate Trigger Voltage
I
GT
V
GD
I
H
I
L
dv/dt(s)
dv/dt(c)
Gate Trigger Current
Gate Non-Trigger Voltage
Holding Current
Latching Current
Critical Rate of Rise of
Off-State Voltag
II
III
Critical-Rate of Rise of Off-State Com-
mutating Voltage (di/dt=-0.7A/uS)
Commutation dv/dt test
V
DRM
(V)
FKN08PN60
Test Condition
1. Junction Temperature
T
J
=125qC
2. Rate of decay of on-state
commutating current (di/dt)
C
3. Peak off-state voltage
V
D
= 300V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
(di/dt)
C
Main Current
Time
Time
Main Voltage
(dv/dt)
C
Time
V
D
2
FKN08PN60 Rev. A
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Quadrant Definitions for a Triac
T2 Positive
+
(+) T2
(+) T2
Quadrant II
(-) I
GT
GATE
T1
(+) I
GT
GATE
T1
Quadrant I
I
GT
-
(-) T2
(-) T2
+ I
GT
Quadrant III
(-) I
GT
GATE
T1
(+) I
GT
GATE
T1
Quadrant IV
-
T2 Negative
Package Marking and Ordering Information
Device Marking
K08PN60
Device
FKN08PN60
Package
TO-92
Packing
Bulk
Tape Width
--
Quantity
--
3
FKN08PN60 Rev. A
www.fairchildsemi.com
FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics
Figure 1. On-State Characteristics
Figure 2. Power Dissipation
P
AV
[W], Maximum Average Power Dissipation
1.2
I
TM
[A], On-State Current
1.0
DC
0.8
o
T
J
=125 C
1
o
T
J
=25 C
o
180 C
120 C
o
0.6
90 C
0.4
o
60 C
0.2
o
30 C
o
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
0.2
0.4
0.6
0.8
1.0
V
TM
[V], On-State Voltage
IT
RMS
[A], On-State Current
Figure 3. RMS Current Rating
Figure 4. Typical Gate Trigger Current
vs Junction Temperature
6
Maximum Allowable Case Temperature, T
C
[ C]
o
120
I
GT
[mA], Gate Trigger Current
30 C
60 C
o
o
5
110
90 C
o
o
4
100
Q3
3
120 C
180 C
o
Q2
2
90
DC
80
Q1
1
70
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
-40
0
o
40
80
120
IT
RMS
[A], On-State Current
T
J
[ C], Junction Temperature
Figure5. Typical Gate Voltage
vs Junction Temperarure
1.0
Figure6. Typical Latching Currrent
vs Junction Temperature
6
V
GT
[mA], Gate Trigger Voltage
0.9
0.8
V
GT
[mA], Gate Trigger Voltage
4
Q3
0.7
Q3
Q1
0.6
2
Q2
0.5
Q1
0.4
-40
0
o
40
80
120
0
-40
0
o
40
80
120
T
J
[ C], Junction Temperature
T
J
[ C], Junction Temperature
4
FKN08PN60 Rev. A
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FKN08PN60 TRIAC (Silicon Bidirectional Thyristor)
Typical Performance Characteristics
(Continued)
Figure7. Typical Holding Current
vs Junction Temperature
5
Figure8. Junction to Case Thermal Resistance
Junction to Case Thermal Resistance, [ C/W]
50
I
H
[mA],Holding Current
4
o
40
3
30
Q3
2
20
Q1
1
Q2
10
0
-40
0
o
40
80
120
0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
T
J
[ C], Junction Temperature
Time, [S]
5
FKN08PN60 Rev. A
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