FQA90N10V2 100V N-Channel MOSFET
October 2005
QFET
FQA90N10V2
100V N-Channel MOSFET
Features
• 105A, 100V, R
DS(on)
= 10mΩ @V
GS
= 10 V
• Low gate charge ( typical 147 nC)
• Low Crss ( typical 300 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for DC to DC
converters, sychronous rectification, and other applications low-
est Rds(on) is required.
D
G
TO-3P
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQA90N10V2
100
105
78
420
±30
2430
105
33
4.5
330
2.2
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.45
--
40
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA90N10V2 Rev. A
FQA90N10V2 100V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
AV290N10
Device
FQA90N10V2
Package
TO-3P
T
C
= 25°C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Conditions
V
GS
= 0V, I
D
= 250µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, T
C
= 150°C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 52.5A
V
DS
= 40V, I
D
= 52.5A
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
(Note 4)
Min.
100
--
--
--
--
--
2.0
--
--
--
--
--
Typ.
--
0.1
--
--
--
--
--
8.5
72
4730
1180
300
52
492
304
355
147
28
60
--
--
--
114
0.54
Max Units
--
--
1
10
100
-100
4.0
10
--
6150
1530
390
114
994
618
720
191
--
--
105
420
1.4
--
--
V
V/°C
µA
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 100V, I
D
= 90A
R
G
= 25Ω
(Note 4, 5)
--
--
--
--
--
--
(Note 4, 5)
V
DS
= 80V, I
D
= 90A
V
GS
= 10V
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 105A
V
GS
= 0V, I
S
= 90A
dI
F
/dt =100A/µs
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.22mH, I
AS
= 105A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
105A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
4. Pulse Test: Pulse width
≤
300µs, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQA90N10V2 Rev. A
2
www.fairchildsemi.com
FQA90N10V2 100V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
Figure 2. Transfer Characteristics
10
2
175
°
C
25
°
C
I
D
, Drain Current [A]
10
2
I
D
, Drain Current [A]
10
1
-55
°
C
10
0
10
1
* Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
°
C
-1
* Notes :
1. V
DS
= 40V
2. 250
µ
s Pulse Test
10
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
30
R
DS(ON)
[m
Ω
],
Drain-Source On-Resistance
V
GS
= 10V
20
I
DR
, Reverse Drain Current [A]
25
10
2
10
1
15
10
V
GS
= 20V
175
°
C
10
0
25
°
C
* Notes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
5
* Note : T
J
= 25
°
C
0
0
100
200
300
400
500
600
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
11000
10000
9000
8000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 50V
8
Capacitance [pF]
7000
6000
5000
4000
3000
2000
1000
0
-1
10
10
0
C
iss
C
oss
* Notes ;
1. V
GS
= 0 V
V
DS
= 80V
6
4
C
rss
2. f = 1 MHz
2
* Note : I
D
= 90A
10
1
0
0
20
40
60
80
100
120
140
160
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQA90N10V2 Rev. A
3
www.fairchildsemi.com
FQA90N10V2 100V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 45 A
0.9
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
0.5
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
°
C]
T
J
, Junction Temperature [
°
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
3
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
90
80
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
2
10
2
100
µ
s
1 ms
10 ms
DC
70
60
50
40
30
20
10
10
1
10
0
* Notes :
1. T
C
= 25
°
C
2. T
J
= 175
°
C
3. Single Pulse
10
-1
10
0
10
1
V
DS
, Drain-Source Voltage [V]
0
25
50
75
100
125
150
175
T
C
, Case Temperature [
°
C]
Figure 11. Transient Thermal Response Curve
10
0
(t), Thermal Response
D = 0 .5
-1
10
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
* N o te s :
1 . Z
θ
J C
( t) = 0 .4 5
°
C /W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
P
DM
P
DM
θ
JC
10
Z
-2
t
1
t
1
t
2
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
FQA90N10V2 Rev. A
4
www.fairchildsemi.com
FQA90N10V2 100V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA90N10V2 Rev. A
5
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