FQB8N60CF 600V N-Channel MOSFET
October 2008
FQB8N60CF
Features
QFET
TM
600V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
• 6.26A, 600V, R
DS(on)
= 1.5
Ω
@V
GS
= 10 V
• Low gate charge ( typical 28nC)
• Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS
Compliant
D
D
G
G
S
D
2
-PAK
FQB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
Parameter
FQB8N60CF
600
6.26
3.96
25
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
160
6.26
14.7
4.5
147
1.18
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
FQB8N60CF
0.85
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation
FQB8N60CF Rev. A1
1
www.fairchildsemi.com
FQB8N60CF 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQB8N60CF
Device
FQB8N60CFTM
Package
D2-PAK
T
C
= 25°C unless otherwise noted
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 3.13A
V
DS
= 40 V, I
D
= 3.13 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
(Note 4)
Min
600
--
--
--
--
--
2.0
--
--
--
--
--
Typ
--
0.7
--
--
--
--
--
1.25
8.7
965
105
12
16.5
60.5
81
64.5
28
4.5
12
--
--
--
82
242
Max Units
--
--
10
100
100
-100
4.0
1.5
--
1255
135
16
45
130
170
140
36
--
--
6.26
25
1.4
--
--
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
nC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 300 V, I
D
= 6.26A,
R
G
= 25
Ω
--
--
--
(Note 4, 5)
--
--
--
--
--
--
--
--
V
DS
= 480 V, I
D
= 6.26A,
V
GS
= 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 6.26 A
V
GS
= 0 V, I
S
= 6.26 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I
AS
= 6.26A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
6.26A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
FQB8N60CF Rev. A1
2
www.fairchildsemi.com
FQB8N60CF 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
Figure 2. Transfer Characteristics
10
1
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
150 C
o
10
0
25 C
10
0
o
-55 C
o
10
-1
※
Notes :
1. 250µs Pulse Test
2. T
C
= 25
℃
-1
※
Notes :
1. V
DS
= 40V
2. 250µs Pulse Test
10
-1
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
3.5
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
2.5
V
GS
= 10V
2.0
I
DR
, Reverse Drain Current [A]
3.0
10
1
10
0
1.5
V
GS
= 20V
1.0
※
Note : T
J
= 25
℃
150
℃
-1
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µs Pulse Test
0.5
0
5
10
15
20
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
2000
1800
1600
1400
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
Capacitance [pF]
C
iss
8
1200
1000
800
600
400
200
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
oss
6
4
C
rss
2
* Note : I
D
= 6.26A
0
0
-1
10
0
5
10
15
20
25
30
10
0
10
1
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQB8N60CF Rev. A1
3
www.fairchildsemi.com
FQB8N60CF 600V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
3.0
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
0.9
1.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 3.13 A
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
킕
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
10
2
Figure 10. Maximum Drain Current
vs. Case Temperature
8
Operation in This Area
is Limited by R
DS(on)
10
µ
s
100
µ
s
10
1
I
D
, Drain Current[A]
10
0
10ms
100ms
DC
I
D
, Drain Current [A]
1ms
6
4
10
-1
2
* Notes :
o
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
V
DS
, Drain-SourceVoltage[V]
T
C
, Case Temperature [
℃
]
Figure 11. Transient Thermal Response Curve
10
0
D = 0 .5
Z
θ
JC
(t), Thermal Response
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
※
N o te s :
1 . Z
θ
J C
(t) = 0 .8 5
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
10
-2
s in g le p u ls e
P
DM
t
1
10
-3
t
2
10
0
10
-5
10
-4
10
-2
10
-1
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQB8N60CF Rev. A1
4
www.fairchildsemi.com
FQB8N60CF 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB8N60CF Rev. A1
5
www.fairchildsemi.com
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