MOSFET N-CH 400V 6.6A TO-220F
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) at 25°C | 6.6A（Tc） |
| Drive voltage (maximum Rds On, minimum Rds On) | 10V |
| Rds On (maximum value) when different Id, Vgs | 480 milliohms @ 3.3A, 10V |
| Vgs (th) (maximum value) when different Id | 5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum value) | 35nC @ 10V |
| Vgs (maximum value) | ±30V |
| Input capacitance (Ciss) at different Vds (maximum value) | 1400pF @ 25V |
| FET function | - |
| Power dissipation (maximum) | 50W（Tc） |
| Operating temperature | -55°C ~ 150°C（TJ） |
| Installation type | Through hole |
| Supplier device packaging | TO-220F |
| Package/casing | TO-220-3 whole package |
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| FQPF11N40T | |
|---|---|
| Description | MOSFET N-CH 400V 6.6A TO-220F |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) at 25°C | 6.6A（Tc） |
| Drive voltage (maximum Rds On, minimum Rds On) | 10V |
| Rds On (maximum value) when different Id, Vgs | 480 milliohms @ 3.3A, 10V |
| Vgs (th) (maximum value) when different Id | 5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum value) | 35nC @ 10V |
| Vgs (maximum value) | ±30V |
| Input capacitance (Ciss) at different Vds (maximum value) | 1400pF @ 25V |
| Power dissipation (maximum) | 50W（Tc） |
| Operating temperature | -55°C ~ 150°C（TJ） |
| Installation type | Through hole |
| Supplier device packaging | TO-220F |
| Package/casing | TO-220-3 whole package |
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