FQP18N20V2/FQPF18N20V2
QFET
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
TM
Features
•
•
•
•
•
•
18A, 200V, R
DS(on)
= 0.14Ω @V
GS
= 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
▲
●
●
G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP18N20V2
18
11.9
72
FQPF18N20V2
200
18
11.9
72
±
30
340
18
12.3
6.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
123
0.99
-55 to +150
300
40
0.32
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N20V2
1.01
0.5
62.5
FQPF18N20V2
3.1
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
200
--
--
--
--
--
--
0.25
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 9 A
V
DS
= 40 V, I
D
= 9 A
(Note 4)
3.0
--
--
--
0.12
11
5.0
0.14
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 160 V, V
GS
= 0 V,
f = 1.0 MHz
V
DS
= 0V to 160 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
--
830
200
25
70
135
1080
260
33
--
--
pF
pF
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 160 V, I
D
= 18 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 100 V, I
D
= 18 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
16
133
38
62
20
5.6
10
40
275
85
135
26
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 18 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 18 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
158
1.0
18
72
1.5
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.58mH, I
AS
= 18A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
18A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Typical Characteristics
V
GS
Top :
15.0 V
10.0 V
10
1
8.0 V
7.0 V
I
D
, Drain Current [A]
6.5 V
6.0 V
Bottom :
5.5 V
0
I
D
, Drain Current [A]
10
1
150℃
10
25℃
-55℃
10
0
※
Notes :
10
-1
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
-1
0
1
※
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
10
10
10
10
-1
V
DS
, Drain-Source Voltage [V]
4
5
6
7
8
9
10
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.5
0.4
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
Drain-Source On-Resistance
10
1
R
DS(ON)
[Ω ],
0.3
V
GS
= 20V
0.2
10
0
150℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
0.1
※
Note : T
J
= 25
℃
0.0
0
10
20
30
40
50
60
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
V
DS
= 40V
10
2000
V
DS
= 100V
V
DS
= 160V
V
GS
, Gate-Source Voltage [V]
Capacitance [pF]
1500
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
8
6
1000
C
iss
C
oss
4
500
C
rss
0
-1
10
2
※
Note : I
D
= 18A
10
0
10
1
0
0
5
10
15
20
25
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Typical Characteristics
(Continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
Drain-Source On-Resistance
R
DS(ON)
, (Normalized)
2.0
1.0
1.5
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
1.0
※
Notes :
0.5
1. V
GS
= 10 V
2. I
D
= 9 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
Operation in This Area
is Limited by R
DS(on)
Operation in This Area
10
2
10
2
is Limited by R
DS(on)
100 us
100 us
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1 ms
10
1
1 ms
10
1
10 ms
DC
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
o
10 ms
100 ms
DC
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
0
10
-1
10
-1
10
0
0
10
1
10
2
10
10
1
10
2
V
DS
, Drain-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP18N20V2
Figure 9-2. Maxiumum Safe Operating Area
for FQPF18N20V2
20
15
I
D
, Drain Current [A]
10
5
0
25
50
75
100
125
150
T
C
, Case Temperature [
℃
]
Figure 10. Maximum Drain Current
vs. Case Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Typical Characteristics
(Continued)
(t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5
※
N o te s :
1. Z
θ
JC
0 .2
10
-1
(t) = 1 .0 1
℃
/W M a x .
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
2 . D u ty F a c to r, D = t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
JC
P
DM
t
1
t
2
10
-2
Z
θ
10
-2
10
-5
10
-4
10
-3
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP18N20V2
( t), T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2
0 .1
0 .0 5
10
-1
※
N o te s :
1. Z
θ
JC
(t) = 3 .1
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3. T
JM
- T
0 .0 2
0 .0 1
C
= P
D M
* Z
θ
JC
(t)
P
DM
s in g le p u ls e
JC
t
1
t
2
-2
-1
0
1
Z
θ
10
-2
10
-5
10
-4
10
-3
10
10
10
10
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF18N20V2
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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