FVP12030IM3LEG1 Energy Recovery
March 2007
FVP12030IM3LEG1
Energy Recovery
Feature
• Use of high speed 300V IGBTs with parallel FRDs
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal sub-
strates
PDP SPM
TM
General Description
It is an advanced smart power module(SPM
TM
) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the energy recovery circuit of
PDP driving system. It combines optimized circuit protection
and drive matched to low-loss and high speed IGBTs. Under
voltage lock-out protection function enhances the system reli-
ability . The high speed built-in HVIC provides opto-couplerless
single power supply IGBT gate driving capability that futher
reduce the overall system size of PDP sustaining boards.
Applications
• Energy Recovery Part of a PDP (Plasma Display Panel)
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
1
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FVP12030IM3LEG1 Rev. A
FVP12030IM3LEG1 Energy Recovery
Pin Configurations
Top View
Figure 2.
2
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
Pin Name
COML
VINL
VCCL
VBL
GL
VSL
IGND
COMH
VINH
VCCH
VBH
GH
VSH
CH
EH
KH
AL
CL
EL
Low-side Signal Ground
Low-side Signal Input
Low-side Supply Voltage for HVIC
Pin Descriptions
Low-side Floating Supply Voltage for Buffer IC and IGBT Driving
Low-side Gate
Low-side Floating Ground for Buffer IC and IGBT Driving
IMS Ground
High-side Signal Ground
High-side Signal Input
High-side Supply Voltage for HVICg
High-side Floating Supply Voltage for Buffer IC and IGBT Driving
High-side Gate
High-side Floating Ground for Buffer IC and IGBT Driving
High-side IGBT Collector
High-side IGBT Emitter
High-side Diode Cathode
Low-side Diode Anode
Low-side IGBT Collector
Low-side IGBT Emitter
3
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
Internal Equivalent Circuit and Input/Output Pins (Bottom View)
(13) VSH
(12) GH
(11) VBH
(14) CH
HVIC
(10) VCCH
(9) VINH
(8) COMH
(7) IGND
(16) KH
(6) VSL
(5) GL
(4) VBL
VCC
IN
COM
VB
OUT
VS
Buffer IC
VCC
IN
COM
COM
OUT
(15) EH
(17) AL
HVIC
(3) VCCL
(2) VINL
(1) COML
VCC
IN
COM
VB
OUT
VS
Buffer IC
VCC
IN
COM
COM
OUT
(18) CL
(19) EL
Figure 3.
4
FVP12030IM3LEG1 Rev. A
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FVP12030IM3LEG1 Energy Recovery
Absolute Maximum Ratings
(T
Symbol
VCC
VBS
VIN
C
= 25°C, Unless Otherwise Specified)
Parameter
Control Supply Voltage
Control Bias Voltage
Input Signal Voltage
Conditions
Applied between VCCL-COML, VCCH - COMH
Applied between VBL - VSL, VBH - VSH
Applied between VINL-COML,VINH - COMH
Rating
20
20
-0.3~17
Units
V
V
V
Symbol
VCE
Parameter
Collector to Emitter Voltage
Conditions
Between CL to EL
,
Between CH to EH
V
GH-EH
=V
GL-EL
=0V , I
CH
=I
CL
=250µA
Between KH to EH
,
Between CL to AL
I
AH
=I
AL
=250µA
Between CH to EH
,
Between CL to EL
I
AH
=I
AL
=250µA
VINL, VINH
Between CL to EL
,
Between CH to EH
Between EH to KH
,
Between AL to CL
per diode
Between EH to CH Between EL to CL
Rating
300
300
300
-0.3 to
VCC+0.3
120
30
10
300
300
100
Units
V
V
V
V
A
A
A
A
A
A
VRRM
Peak Repetitive Reverse Voltage
VIN
I
C
I
F(AV)
I
CP
I
FP
Notes :
Input Signal Voltage
Collector Current Continuous
Average Rectified Forward Current
Pulsed Collector Current
Pulsed Diode Current
Between CL to EL
,
Between CH to EH
(Note1)
Between EH to KH
,
Between AL to CL
(Note1)
Between EH to CH Between EL to CL
per diode
(Note1)
1. Pulse Width = 100µsec, Duty = 0.1; half sine wave
*I
cp
limited by MAX T
j
Symbol
Parameter
IGBT Dissipation
Conditions
Tc=25°C per IGBT
Tc=100°C per IGBT
Tc=25°C per diode
Tc=100°C per diode
Rating
117
47
109
43
-20 ~ 150
-20 ~ 125
-40 ~ 125
Units
W
W
W
W
°C
°C
°C
V
rms
P
d
FRD Dissipation
Tj
T
C
T
STG
V
ISO
Operating Junction Temperture
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS substrate
1500
Thermal Resistance
Symbol
R
th(j-c)
Parameter
Junction to Case Thermal
Resistance
Conditions
Between CH to EH, Between CL to EL Per IGBT
Between EH to KH, Between AL to CL
Between CH to EH, Between CL to EL Per Diode
Min.
-
-
-
Max.
1.07
1.15
3.70
Units
°C/W
°C/W
°C/W
5
FVP12030IM3LEG1 Rev. A
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