FP7G50US60 Transfer Molded Type IGBT Module
July 2008
FP7G50US60
Transfer Molded Type IGBT Module
General Description
Fairchild’s New IGBT Modules ( Transfer Molded Type ) provide
low conduction and switching losses as well as short circuit
ruggedness. They are designed for applications such as Motor
control, Uninterrupted Power Supplies (UPS) and general
Inverters where short circuit ruggedness is a required feature.
Power-SPM
TM
tm
Features
• Short Circuit rated 10us @Tc=100°C, Vge=15V
• High Speed Switching
• Low Saturation Voltage : Vce(sat) =2.2V @Ic=50A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
Package Code : EPM7
1
Application
• Welders
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS
3
2
4
5
6
7
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
Rating
600
±
20
50
100
50
100
10
250
-40 to +125
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ AC 1minute
©2008 Fairchild Semiconductor Corporation
1
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FP7G50US60 Rev. A
FP7G50US60 Transfer Molded Type IGBT Module
Pin Configuration and Pin Description
Top View
1
3
2
4
5
6
7
Internal Circuit Diagram
Pin Description
Pin Number
1
2
3
4
5
6
7
Pin Description
Emitter of Q1, IGBT,
Collector of Q2, IGBT
Emitter of Q2, IGBT
Collector of Q1, IGBT
Gate of Q1, IGBT
Emitter of Q1, IGBT
Gate of Q2, IGBT
Emitter of Q2, IGBT
FP7G50US60 Rev. A
2
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FP7G50US60 Transfer Molded Type IGBT Module
Electrical Characteristics
(T
J
= 25°C,
Symbol
Off Characteristics
BV
CES
∆BV
CES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Unless Otherwise Specified)
Parameter
Conditions
Min Typ Max Units
V
GE
= 0V, I
C
= 250µA
600
-
-
-
-
0.6
-
-
-
-
250
±
100
V
V
uA
nA
Temperature Coeff. of Breakdown Voltage V
GE
= 0V, I
C
= 1mA
Collector Cut-off Current
Gate-Emitter Leakage Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
V
GE
= 0V, I
C
=50mA
I
C
= 50A
,
V
GE
= 15V
5.0
-
6.0
2.2
8.5
2.8
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Capacitance
V
CE
= 30V, V
GE
= 0V,
f = 1MHz
2920
400
75
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 300 V, I
C
= 50A, V
GE
= 15V
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100°C
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9Ω, V
GE
= 15V
Inductive Load, T
C
= 125°C
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9Ω, V
GE
= 15V
Inductive Load, T
C
= 25°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
58
40
107
140
0.75
0.54
1.29
53
40
106
274
1.09
1.68
2.77
-
136
26
76
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
FP7G50US60 Rev. A
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FP7G50US60 Transfer Molded Type IGBT Module
Electrical Characteristics of DIODE
(T
J
= 25°C,
Symbol
V
FM
Unless Otherwise Specified)
Parameter
Diode Forward Voltage
I
F
= 50A
Conditions
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
Min Typ Max Units
-
-
-
-
-
-
-
-
1.9
1.8
76
138
4
6
152
404
260
nC
5.2
A
2.8
V
-
100
ns
t
rr
Diode Reverse Recovery Time
T
C
= 100°C
Diode Peak Reverse Recovery Current
I
F
= 50A
di / dt = 100 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
Diode Reverse Recovery Charge
T
C
= 100°C
I
rr
Q
rr
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
Weight of Module
(Conductive grease applied)
Typ.
-
-
0.05
-
Max.
0.4
1.0
-
90
Units
°C/W
°C/W
°C/W
g
FP7G50US60 Rev. A
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FP7G50US60 Transfer Molded Type IGBT Module
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
140
20V
15V
12V
Fig 2. Typical Saturation Voltage Characteristics
140
I
C
, Collector Current[A]
I
C
, Collector Current[A]
120
100
80
60
40
20
0
0
2
4
120
100
80
60
40
20
Common Emitter
V
GE
= 15V
T
C
= 25 C
T
C
= 125 C
o
o
V
GE
= 10V
Common Emitter
o
T
C
= 25 C
6
8
0
0.3
1
10
20
V
CE
, Collector-Emitter Voltage[V]
V
CE
, Collector-Emitter Voltage[V]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
V
CE
, Collector-Emitter Voltage[V]
5
Com m on Em itter
V
G E
= 15V
100A
Fig 4. Load Current vs. Frequency
120
V
CC
= 300V
Load Current : peak of square wave
Load Current [A]
4
3
50A
100
80
60
40
20
Duty cycle : 50%
o
T
C
= 100 C
Power Dissipation = 130W
2
1
0
0
50
100
o
I
C
= 30A
150
0
0.1
1
10
100
1000
T
C
, Case Tem perature[ C]
Frequency [Khz]
Fig 5. Saturation Voltage vs. V
GE
V
CE
, Collector-Emitter Voltage[V]
Fig 6. Saturation Voltage vs. V
GE
V
CE
, Collector-Emitter Voltage[V]
20
16
12
8
4
I
C
= 30A
100A
50A
20
16
12
8
100A
Common Emitter
o
T
C
= 25 C
Common Emitter
o
T
C
= 25 C
4
I
C
= 30A
50A
0
0
4
8
12
16
20
0
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage[V]
V
GE
, Gate-Emitter Voltage[V]
FP7G50US60 Rev. A
5
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