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FDMS8848NZ

Description
MOSFET N-CH 40V 22.8A POWER56
Categorysemiconductor    Discrete semiconductor   
File Size227KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDMS8848NZ Overview

MOSFET N-CH 40V 22.8A POWER56

FDMS8848NZ Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C22.8A(Ta),49A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs3.1 milliohm @ 22.8A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)152nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)8075pF @ 20V
FET function-
Power dissipation (maximum)2.5W(Ta),104W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packaging8-PQFN(5x6)
Package/casing8-PowerTDFN
FDMS8848NZ N-Channel PowerTrench
®
MOSFET
May 2009
FDMS8848NZ
N-Channel PowerTrench
®
MOSFET
40 V, 49 A, 3.1 m
Features
Max r
DS(on)
= 3.1 m
Max r
DS(on)
= 5.1 m
at V
GS
= 10 V, I
D
= 22.8 A
at V
GS
= 4.5 V, I
D
= 17.5 A
General Description
The FDMS8848NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
Applications
Computing VR & IMVP Vcore
Secondary Side Synchronous Rectifier
POL DC/DC Converter
Oring FET/ Load Switching
Top
Bottom
S
Pin 1
S
D
S
G
D
D
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
Power 56
MOSFET Maximum Ratings
T
C
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 3)
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
Parameter
Ratings
40
±20
49
143
22.8
90
480
104
2.5
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
R
JC
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.2
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS8848NZ
Device
FDMS8848NZ
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS8848NZ Rev C1
1
www.fairchildsemi.com
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