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RJH65T46DPQ-A0#T0

Description
IGBT TRENCH 650V 80A TO247A
Categorysemiconductor    Discrete semiconductor   
File Size340KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJH65T46DPQ-A0#T0 Overview

IGBT TRENCH 650V 80A TO247A

RJH65T46DPQ-A0#T0 Parametric

Parameter NameAttribute value
IGBT typechannel
Voltage - collector-emitter breakdown (maximum)650V
Current - Collector (Ic) (Maximum)80A
Vce(on) when different Vge,Ic2.4V @ 15V,40A
Power - Max340.9W
switching energy450µJ (on), 550µJ (off)
input typestandard
gate charge138nC
Td (on/off) value at 25°C45ns/170ns
Test Conditions400V, 40A, 10 ohms, 15V
Reverse recovery time (trr)100ns
Operating temperature175°C(TJ)
Installation typeThrough hole
Package/casingTO-247-3
Supplier device packagingTO-247A
Preliminary
Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT
Application: Power Factor Correction circuit
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
t
f
= 45 ns typ. (at V
CC
= 400 V, V
GE
= 15 V , I
C
= 40 A, Rg = 10
,
Ta = 25°CInductive load)
Operation frequency (20kHz
f
˂
100kHz)
Not guarantee short circuit withstand time
R07DS1259EJ0100
Rev.1.00
May 18, 2015
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode
Forward current
Tc = 25 °C
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
i
C
(peak)
Note1
I
DF
I
DF
i
DF
(peak)
Note1
P
C
j-c
j-cd
Tj
Note2
Tstg
Ratings
650
30
80
40
300
30
15
100
340.9
0.44
1.33
175
–55 to +150
Unit
V
V
A
A
A
A
A
A
W
°C/W
°C/ W
°C
°C
Notes: 1. PW
10
s,
duty cycle
1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
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