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RJP65T54DPM-A0#T2

Description
IGBT TRENCH 650V 60A TO-3PFP
Categorysemiconductor    Discrete semiconductor   
File Size521KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RJP65T54DPM-A0#T2 Overview

IGBT TRENCH 650V 60A TO-3PFP

RJP65T54DPM-A0#T2 Parametric

Parameter NameAttribute value
IGBT typechannel
Voltage - collector-emitter breakdown (maximum)650V
Current - Collector (Ic) (Maximum)60A
Vce(on) when different Vge,Ic1.68V @ 15V,30A
Power - Max63.5W
switching energy330µJ (on), 760µJ (off)
input typestandard
gate charge72nC
Td (on/off) value at 25°C35ns/120ns
Test Conditions400V, 30A, 10 Ohm, 15V
Operating temperature175°C(TJ)
Installation typeThrough hole
Package/casingSC-94
Supplier device packagingTO-3PFP
Data Sheet
RJP65T54DPM-A0
650V - 30A - IGBT
Application: Partial switching circuit
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
Isolated package
Trench gate and thin wafer technology (G7H series)
High speed switching
Operation frequency (50Hz
f
˂
20kHz)
Not guarantee short circuit withstand time
R07DS1365EJ0110
Rev.1.10
Dec 19, 2016
Outline
RENESAS Package code: PRSS0003ZP-A
(Package name: TO-3PFP)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal resistance
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
I
C
I
C
i
C
(peak)
Note1
P
C
j-c
Tj
Note2
Tstg
Ratings
650
30
60
30
225
63.5
2.35
175
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect
a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.
R07DS1365EJ0110 Rev.1.10
Dec 19, 2016
Page 1 of 7
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