Ordering number : ENA2066A
FW389
Power MOSFET
Features
•
100V, 2A, 225m
Ω
, –100V, –2A, 300m
Ω
, Complementary Dual SOIC8
ON-resistance Nch : RDS(on)1=165m
Ω
(typ.)
Pch : RDS(on)1=230m
Ω
(typ.)
4V drive
Halogen free compliance
Protection diode in
•
http://onsemi.com
Input Capacitance Nch : Ciss=490pF(typ.)
Pch : Ciss=1000pF(typ.)
•
•
•
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤100ms)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Tstg
EAS
IAV
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm
×0.8mm)
1unit, (PW≤10s)
When mounted on ceramic substrate (2000mm
2
×0.8mm),
(PW≤10s)
2
Conditions
N-channel
100
±20
2
5
8
1.8
2.2
150
P-channel
--100
±20
--2
-
-5
-
-8
Unit
V
V
A
A
A
W
W
°C
°C
-
-55 to +150
5.3
2
5.3
--2
mJ
A
*1
N-Channel:VDD=10V, L=2
m
H, IAV=2A(Fig.1)
P-Channel:VDD=
--
10V, L=2
m
H, IAV=
--
2A(Fig.1)
*2
L≤2
m
H, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
lectrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=10V, f=1MHz
1.5
2.9
165
180
190
490
34
13
9.3
See specified Test Circuit.
5.4
42
26
225
254
275
100
1
±10
2.6
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
Symbol
Conditions
Ratings
min
typ
max
Unit
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Semiconductor Components Industries, LLC, 2014
February, 2014
21314HK TC-00003093/61312TKIM PA No. A2066-1/8
FW389
Continued from preceding page
Electrical Characteristics
at Ta=25°C
Parameter
N-channel]
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Gata Resistance
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Gata Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Rg
IS=-
-2A, VGS=0V
VDS=0V, VGS=0V, f=1MHz
0
VDS=-
-50V, VGS=-
-10V, ID=-
-2A
See specified Test Circuit.
VDS=--20V, f=1MHz
ID=-
-1mA, VGS=0V
VDS=-
-100V, VGS=0V
VGS=±16V, VDS=0V
VDS=-
-10V, ID=-
-1mA
VDS=-
-10V, ID=-
-2A
ID=-
-2A, VGS=-
-10V
ID=-
-1A, VGS=-
-4.5V
ID=-
-1A, VGS=-
-4V
-
-1.2
4.7
230
240
250
1000
77
47
12
16
110
40
21
2.8
4.4
--0.79
-
-1.2
50
300
336
355
--100
--1
±10
-
-2.6
V
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ω
mΩ
Qg
Qgs
Qgd
VSD
Rg
IS=2A, VGS=0V
VDS=0V, VGS=0V, f=1MHz
0
VDS=50V, VGS=10V, ID=2A
10
1.4
2.1
0.78
1.2
12
nC
nC
nC
V
Ω
Symbol
Conditions
Ratings
min
typ
max
Unit
mΩ
Fig.1 Unclamped Inductive Switching Test Circuit
[N-channel]
[P-channel]
D
≥50Ω
RG
L
FW389
≥50Ω
RG
G
D
L
FW389
G
10V
0V
50Ω
S
VDD
0V
--10V
50Ω
S
VDD
No. A2066-2/8
FW389
Fig.2 Switching Time Test Circuit
[N-channel]
VIN
VDD=50V
[P-channel]
VIN
VDD= --50V
10V
0V
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
D
ID=2A
RL=25Ω
VOUT
PW=10μs
D.C.≤1%
VIN
D
ID= --2A
RL=25Ω
VOUT
G
P.G
FW389
50Ω
S
P.G
FW389
50Ω
S
8
7
6
5
4
3
2
1
0
ID -- VDS
8.0
V
4.5
V
6.0
[Nch]
10
9
8
V
VDS=10V
ID -- VGS
[Nch]
4.0V
Drain Current, ID -- A
Drain Current, ID -- A
10
.0V
7
6
5
4
3.5V
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
IT16906
0
0
0.5
1.0
1.5
2.0
25
°
C
2.5
3.0
--25
°
C
VGS=3.0V
Ta=
7
3
5
°
C
3.5
4.0
4.5
Drain-to-Source Voltage, VDS -- V
450
RDS(on) -- VGS
[Nch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
400
350
300
250
200
RDS(on) -- Ta
IT16907
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
16
18
20
2A
ID=1A
VG
150
100
50
0
--60
.0A
=1
I
=4
V, D
4.5
GS
V
S=
=1
, ID
.0V
.0A
=1
GS
V
.0A
=2
ID
V,
0.0
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT16908
Ambient Temperature, Ta --
°
C
IT16909
No. A2066-3/8
FW389
10
|
y
fs
|
-- ID
25
°
C
[Nch]
VDS=10V
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
3
2
10
7
5
3
2
IS -- VSD
VGS=0V
[Nch]
75
°
C
Source Current, IS -- A
C
25
°
= --
Ta
1.0
7
5
3
2
Ta=
75
°
C
0
0.2
0.4
1.0
7
5
3
2
0.1
0.1
0.1
7
5
3
2
0.01
7
5
3
2
2
3
5
7
Drain Current, ID -- A
1.0
2
3
5
100
7
SW Time -- ID
td(off)
tf
10
IT16910
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
7
0.001
25
°
C
--25
°
C
0.6
0.8
1.0
1.2
IT16911
Switching Time, SW Time -- ns
5
3
2
[Nch]
VDD=50V
VGS=10V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
[Nch]
f=1MHz
10
7
5
3
2
1.0
0.1
td(on)
tr
Coss
Crss
2
3
5
7
Drain Current, ID -- A
1.0
2
3
5
10
9
VGS -- Qg
10
IT16912
7
1.0
0
5
10
15
20
25
30
IT16913
[Nch]
Drain-to-Source Voltage, VDS -- V
100
7
5
3
2
10
7
5
3
2
SOA
[Nch]
Gate-to-Source Voltage, VGS -- V
VDS=50V
ID=2A
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
11
IDP=8A(PW
≤
10
μs)
ID=2A
1.0
7
5
3
2
0.1
7
5
Operation in this
3
2
area is limited by RDS(on).
0.01
Ta=25°C
7
5
Single pulse
3
When mounted on ceramic substrate
2
(2000mm
2
×0.8mm)
1unit
0.001
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
100
1
μ
s
10
ms
ms
DC
1
ope
00m
s
rat
ion
(PW
≤
1
0s)
2 3
Total Gate Charge, Qg -- nC
--8
--7
--6
--5
ID -- VDS
V
--4
.0
IT16914
Drain-to-Source Voltage, VDS -- V
--8
--7
--6
--5
--4
--3
--2
5 7 100
IT16915
[Pch]
--3.
5V
ID -- VGS
[Pch]
--8
.
0V
--6
.0V
VDS= --10V
Drain Current, ID -- A
--
5
4.
--1
0
--4
--3
--2
--1
0
VGS= --3.0V
Drain Current, ID -- A
V
.0V
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
0
0
--0.5
--1.0
--1.5
--2.0
25
°
--2.5
--1
--25
°
C
--3.0
--3.5
C
Ta=7
5
°
C
--4.0
--4.5
Drain-to-Source Voltage, VDS -- V
IT16916
Gate-to-Source Voltage, VGS -- V
IT16917
No. A2066-4/8
FW389
500
RDS(on) -- VGS
[Pch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
500
450
400
350
300
250
200
150
100
50
0
--60
--40
--20
0
RDS(on) -- Ta
.0A
--1
=
, ID
.0A
-1
.0V
=-
--4
.0A
ID
=
,
--1
S
=
.5V
ID
VG
--4
V,
=
S
0.0
VG
--1
=
S
VG
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
450
400
350
300
250
200
150
100
50
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
--2A
ID= --1A
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
--0.01
2
3
5 7 --0.1
|
y
fs
|
-- ID
IT16918
Ambient Temperature, Ta --
°
C
--10
7
5
3
2
[Pch]
IS -- VSD
IT16919
[Pch]
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS= --10V
Source Current, IS -- A
--1.0
7
5
3
2
Ta=7
5
°
C
25
°
C
0
--0.2
--0.4
Ta
C
75
°
C
25
°
--0.01
7
5
3
2
--0.6
--0.8
--1.0
--1.2
IT16921
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
1000
7
5
SW Time -- ID
5 7 --10
IT16920
--0.001
[Pch]
VDD= --50V
VGS= --10V
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
--25
°
C
-25
=-
°
C
--0.1
7
5
3
2
[Pch]
f=1MHz
Switching Time, SW Time -- ns
3
2
100
7
5
3
2
10
7
5
3
2
1.0
--0.1
2
3
5
7
--1.0
2
3
5
7
--10
Ciss, Coss, Crss -- pF
td(off)
tf
Ciss
td(on)
tr
Coss
Crss
10
0
--5
--10
--15
--20
--25
--30
IT13923
Drain Current, ID -- A
--10
--9
VGS -- Qg
IT16922
[Pch]
Drain-to-Source Voltage, VDS -- V
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
SOA
[Pch]
Gate-to-Source Voltage, VGS -- V
VDS= --50V
ID= --2A
Drain Current, ID -- A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
25
IT16924
IDP= --8A(PW
≤
10
μs)
ID= --2A
10
0
10
0m
DC
μ
s
s
1m
ms
10
op
era
tio
n(P
s
W
≤
1
--0.01
7
5
3
2
--0.001
--0.1 2 3
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate
(2000mm
2
×0.8mm)
1unit
5 7--1.0 2 3
5 7--10
2 3
5 7
--100 2 3
0s
)
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
5 7
--100
IT16925
No. A2066-5/8
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