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1N4006S

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size144KB,3 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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1N4006S Overview

1 A, SILICON, SIGNAL DIODE

1N4001S THRU 1N4007S
PLASTIC SILICON RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere
FEATURES
l
l
l
l
l
l
Low forward voltage drop
High current capability
High reliability
High surge current capability
0.6mm leads
Exceeds environmental standards of MIL-S-19500/228
A-405
MECHANICAL DATA
Case: Molded plastic , A-405
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.008 ounce, 0.22 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @T
A
=75
Peak Forward Surge Current 8.3ms single
half sine-wave I
FSM
superimposed on rated
load
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current @T
A
=25
At Rated DC Blocking Voltage @T
A
=100
Typical Junction capacitance (Note 1)
Typical Thermal Resistance (Note 2) R JA
Typical Thermal resistance (NOTE 2) R JL
Operating Temperature Range T
J
Storage Temperature Range T
A
50
35
50
100
75
100
200
140
200
400
280
400
1.0
30
600
420
600
800
560
800
1000
700
1000
UNITS
V
V
V
A
A
1.1
5.0
500
15
50
25
-55 to +150
-55 to +150
V
A
A
P
F
/W
/W

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1N4006S 1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4007S
Description 1 A, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
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