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FDP5N50NZ / FDPF5N50NZ — N-Channel UniFET
TM
II MOSFET
December 2013
FDP5N50NZ / FDPF5N50NZ
500 V, 4.5 A, 1.5
Ω
Features
• R
DS(on)
= 1.38
Ω
(Typ.) @ V
GS
= 10 V, I
D
= 2.25 A
• Low Gate Charge (Typ. 9 nC)
•
Low C
RSS
(Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
N-Channel UniFET
TM
II MOSFET
Description
UniFET
TM
II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
Applications
• LCD/ LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
GD
S
G
TO-220
G
D
S
TO-220F
S
FDP5N50NZ
FDPF5N50NZ
500
±25
4.5*
2.7*
18*
160
4.5
7.8
10
78
o
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
- Derate above 25 C
- Continuous (T
C
=
25
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
0.62
4.5
2.7
18
- Continuous (T
C
= 100
o
C)
- Pulsed
Parameter
Unit
V
V
A
A
mJ
A
mJ
V/ns
Single Pulsed Avalanche Energy
30
0.24
-55 to +150
300
W
W/
o
C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering ,
1/8” from Case for 5 Seconds.
C
o
C
Thermal Characteristics
Symbol
R
θJC
R
θJA
*Drain current limited by maximum junction temperature
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