BT136S-600
4Q Triac
6 July 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package
intended for use in general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Less sensitive gate for improved noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
-
-
-
-
Typ
-
-
-
-
-
5
8
11
30
Max
600
4
25
27
125
35
35
35
70
Unit
V
A
A
A
°C
mA
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT136S-600
4Q Triac
Symbol
I
H
V
T
dV
D
/dt
Parameter
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
Conditions
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 5 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 1.8 A/
ms; I
T
= 4 A; gate open circuit
Min
-
-
100
Typ
5
1.4
250
Max
15
1.7
-
Unit
mA
V
V/µs
Dynamic characteristics
dV
com
/dt
-
50
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
DPAK (SOT428)
Simplified outline
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
BT136S-600
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BT136S-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
6 July 2018
2 / 13
WeEn Semiconductors
BT136S-600
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
5
I
T(RMS)
(A)
4
003aae828
Conditions
Min
-
Max
600
4
25
27
3.1
50
2
5
0.5
150
125
003aae830
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 107 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 150 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
12
I
T(RMS)
(A)
10
8
3
6
2
4
1
2
0
10
-2
0
- 50
0
50
100
T
mb
(°C)
150
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz
T
mb
≤ 107 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT136S-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
6 July 2018
3 / 13
WeEn Semiconductors
BT136S-600
4Q Triac
8
P
tot
(W)
6
003aae827
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
101
T
mb(max)
(°C)
α
α = 180°
α
120°
90°
60°
30°
107
4
113
2
119
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
25
30
003aae831
20
15
10
5
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT136S-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
6 July 2018
4 / 13
WeEn Semiconductors
BT136S-600
4Q Triac
10
3
003aae829
I
T
I
TSM
(A)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
(2)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT136S-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
6 July 2018
5 / 13
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