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FS150R12KT4BOSA1

Description
IGBT MODULE 1200V 150A
CategoryDiscrete semiconductor    The transistor   
File Size465KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FS150R12KT4BOSA1 Overview

IGBT MODULE 1200V 150A

FS150R12KT4BOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X35
Contacts35
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X35
Number of components6
Number of terminals35
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)750 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)605 ns
Nominal on time (ton)165 ns
VCEsat-Max2.1 V
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS150R12KT4
VorläufigeDaten
PreliminaryData
V
CES

1200
150
300
750
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
t
d on
5,2







typ.
1,75
2,05
2,10
5,8
1,25
5,0
9,35
0,35


0,115
0,13
0,135
0,025
0,03
0,03
0,37
0,45
0,48
0,06
0,105
0,125
5,00
9,00
10,0
10,0
15,0
16,0
600

0,083

150
max.
2,10
V
V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A

V

A

A

W

V
EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmittercontrolled4diode
EconoPACK™3modulewithtrench/fieldstopIGBT4andemittercontrolled4diode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 90°C, T
vj max
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 175°C

I
C nom

I
CRM
P
tot
V
GES



CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
I
C
= 5,30 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,1
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,1
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,1
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,1
6,4




1,0
100

t
r


t
d off


t
f


I
C
= 150 A, V
CE
= 600 V, L
S
= 40 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 6000 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 1,1
T
vj
= 150°C
I
C
= 150 A, V
CE
= 600 V, L
S
= 40 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 3600 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 1,1
T
vj
= 150°C
V
GE
15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT
t
P
10 µs, T
vj
= 150°C
E
on


E
off
I
SC
R
thJC
R
thCH
T
vj op




-40


0,20 K/W
K/W
°C
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
preparedby:CM
approvedby:RS

dateofpublication:2013-11-04
revision:2.1
1

FS150R12KT4BOSA1 Related Products

FS150R12KT4BOSA1 FS150R12KT4
Description IGBT MODULE 1200V 150A Interface Modules USB HS to RS232 Conv Assembly 4 DB9 Ports
Is it lead-free? Contains lead Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X35 FLANGE MOUNT, R-XUFM-X35
Contacts 35 35
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Collector-emitter maximum voltage 1200 V 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 code R-XUFM-X35 R-XUFM-X35
Number of components 6 6
Number of terminals 35 35
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 605 ns 605 ns
Nominal on time (ton) 165 ns 165 ns
Base Number Matches 1 1
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