BLS9G2934L-400;
BLS9G2934LS-400
LDMOS S-band radar power transistor
Rev. 1 — 6 April 2017
Product data sheet
1. Product profile
1.1 General description
Single ended 400 W LDMOS power transistor for S-band radar applications in the
frequency range from 2.9 GHz to 3.4 GHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 300
s;
= 10 %; I
Dq
= 400 mA; in a class-AB demo
test circuit.
Test signal
pulsed RF
f
(GHz)
2.9 to 3.4
V
DS
(V)
32
P
L(1dB)
(W)
400
G
p
(dB)
12
D
(%)
43
1.2 Features and benefits
Single ended
Small size
High efficiency
Excellent ruggedness
Designed for S-band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2.9 GHz to 3.4 GHz
BLS9G2934L(S)-400
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLS9G2934L-400 (SOT502A)
1
3
2
1
2
3
sym112
BLS9G2934LS-400 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLS9G2934L-400
BLS9G2934LS-400
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
[1]
Min
-
6
65
-
Max
65
+11
+150
225
Unit
V
V
C
C
Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF
calculator.
BLS9G2934L-400_LS-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 6 April 2017
2 of 13
BLS9G2934L(S)-400
LDMOS S-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Conditions
T
case
= 85
C;
P
L
= 400 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 500
s;
= 10 %
t
p
= 1 ms;
= 10 %
t
p
= 100
s;
= 20 %
0.11
0.13
0.15
0.17
0.18
0.15
K/W
K/W
K/W
K/W
K/W
K/W
Typ
Unit
Symbol Parameter
Z
th(j-case)
transient thermal impedance from junction
to case
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= 0 V; I
D
= 4.5 mA
V
DS
= 10 V; I
D
= 450 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 450 mA
Min Typ
65
1.5
-
-
-
-
-
-
2.0
-
85
-
4.1
Max
-
3.1
4
-
400
-
Unit
V
V
A
A
nA
S
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 15.75 A
0.030 0.060
Table 7.
RF characteristics
Test signal: pulsed RF; 2.9 GHz
f
3.4 GHz; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 32 V;
I
Dq
= 400 mA; T
case
= 25
C; unless otherwise specified, in a class-AB narrow band production
circuit.
Symbol
G
p
D
RL
in
P
droop(pulse)
t
r
t
f
P
L(2dB)
Parameter
power gain
drain efficiency
input return loss
pulse droop power
rise time
fall time
output power at 2 dB gain compression
Conditions
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
P
L
= 400 W
Min
10
40
-
-
-
-
400
Typ
11
43
8
6
6
-
Max Unit
-
-
-
50
50
-
dB
%
dB
dB
ns
ns
W
0.15 0.5
BLS9G2934L-400_LS-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 6 April 2017
3 of 13
BLS9G2934L(S)-400
LDMOS S-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLS9G2934L-400 and BLS9G2934LS-400 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 32 V; I
Dq
= 400 mA; P
L
= 400 W; t
p
= 300
s;
= 10 %.
7.2 Impedance information
Table 8.
f
(GHz)
2.9
3.0
3.1
3.2
3.3
3.4
[1]
Typical impedance
Z
S[1]
()
1.24
j5.79
3.36
j6.81
7.10
j3.33
3.51
j0.05
1.74
j0.92
1.31
j1.89
Z
L[1]
()
1.10
j3.97
1.74
j3.98
2.49
j3.43
2.50
j3.43
2.76
j3.70
1.89
j3.16
Impedances are taken at a single halve of the push-pull transistor
drain
Z
L
gate
Z
S
001aag189
Fig 1.
Definition of transistor impedance
BLS9G2934L-400_LS-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 6 April 2017
4 of 13
BLS9G2934L(S)-400
LDMOS S-band radar power transistor
7.3 Test circuit
40 mm
40 mm
C8
C13
C2 C3
C4
60 mm
C1
C11 C14
C5
R1
C6
C12
C9
amp00307
Printed-Circuit Board (PCB): Rogers 4360; thickness = 0.61 mm;
r
= 6.15; thickness of copper plating = 35
m
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1, C4
C2
C3, C8, C11
C5
C6, C9
C12
C13, C14
R1
Description
Value
Remarks
ATC100A
ATC100B
ATC100A
ATC800A
Murata: GRM55DR61H106KA88L
SMD 0603
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 4.7
F
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 5.1 pF
multilayer ceramic chip capacitor 10 pF
electrolytic capacitor
resistor
100
F,
63 V
5
multilayer ceramic chip capacitor 10
F
BLS9G2934L-400_LS-400
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 6 April 2017
5 of 13
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