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BZX85C11 R0G

Description
DIODE ZENER 11V 1.3W DO204AL
Categorysemiconductor    Discrete semiconductor   
File Size346KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZX85C11 R0G Overview

DIODE ZENER 11V 1.3W DO204AL

BZX85C11 R0G Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)11V
Tolerance±5%
Power - Max1.3W
Impedance (max) (Zzt)8 Ohms
Current at different Vr - Reverse leakage current500nA @ 8.2V
Voltage at different If - Forward (Vf1.2V @ 10mA
Operating temperature-65°C ~ 200°C(TJ)
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-204AL(DO-41)
BZX85C3V3 - BZX85C56
Taiwan Semiconductor
Small Signal Product
5% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 3.3V to 56V
- VZ Tolerance selection of ±5%
- Designed for through-hole device type mounting
- Hermetically sealed glasss
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
DO-41
Hermetically Sealed Glass
MECHANICAL DATA
- Case: DO-41
- High temperature soldering guaranteed: 260
o
C/10s
- Polarity: Cathode indicated by polarity band
- Weight : 310mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
I
F
= 10 mA
(Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
SYMBO
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
1.3
1.2
130
- 65 to +200
o
UNIT
W
V
C/W
o
C
Note 1: Valid provided that electrodes are kept at ambient temerature .
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Version: G1606
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