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BC549B B1G

Description
TRANSISTOR, NPN, 30V, 0.1A, 200A
Categorysemiconductor    Discrete semiconductor   
File Size363KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BC549B B1G Overview

TRANSISTOR, NPN, 30V, 0.1A, 200A

BC549B B1G Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)30V
Vce saturation value (maximum value) when different Ib,Ic-
Current - collector cutoff (maximum)15nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 2mA,5V
Power - Max500mW
Frequency - Transition-
Operating temperature-65°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packagingTO-92
BC546A/B/C - BC550A/B/C
Taiwan Semiconductor
500mW, NPN Small Signal Transistor
FEATURES
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
CBO
V
CEO
V
EBO
I
C
h
FE
Package
Configuration
VALUE
30-80
30-65
6
100
220-800
TO-92
Single Dice
UNIT
V
V
V
mA
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: TO-92
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Weight: 8mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Power dissipation
P
D
SYMBOL
VALUE
BC8xxA/B/C
(Note 1)
500
UNIT
mW
Notes:
1. "xx" is device code from "46" to "50", "MARKING" should follow the "PART NO."
1
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