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CRS04(TE85L,Q,M)

Description
DIODE SCHOTTKY 40V 1A SFLAT
CategoryDiscrete semiconductor    diode   
File Size213KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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CRS04(TE85L,Q,M) Overview

DIODE SCHOTTKY 40V 1A SFLAT

CRS04(TE85L,Q,M) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Samacsys DescriptionSchottky Diodes & Rectifiers Diode Schottky 40V 1A Vf=0.55V
Diode typeRECTIFIER DIODE
Base Number Matches1
CRS04
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS04
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.49 V (max)
Average forward current: I
F(AV)
= 1 A
Repetitive peak reverse voltage: V
RRM
= 40 V
Suitable for compact assembly due to small surface-mount package
“S-FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
40
1 (Note 1)
20 (50 Hz)
-55 to 150
-55 to 150
Unit
V
A
A
°C
°C
JEDEC
JEITA
3-2A1A
Note 1: Ta = 31°C
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm, land size: 6 mm
×
6 mm)
Rectangular waveform (α = 180°), V
R
= 20 V
Note:
TOSHIBA
Weight: 0.013 g (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
V
FM(1)
Peak forward voltage
V
FM(2)
V
FM(3)
Repetitive peak reverse current
Junction capacitance
I
RRM(1)
I
RRM(2)
C
j
I
FM
=
0.1 A
I
FM
=
0.7 A
I
FM
=
1 A
V
RRM
=
5 V
V
RRM
=
40 V
V
R
=
10 V, f
=
1 MHz
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 mm)
Thermal resistance (junction to ambient)
R
th(j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 mm)
Thermal resistance (junction to lead)
R
th(j-ℓ)
140
Test Condition
Min
Typ.
0.395
0.475
0.51
0.6
47
Max
0.49
100
μA
pF
V
Unit
70
°C/W
20
°C/W
Start of commercial production
1999-07
1
2017-04-17

CRS04(TE85L,Q,M) Related Products

CRS04(TE85L,Q,M) CRS04(TE85LQM) CRS04(TE85L) CRS04(TE12L,Q,M)
Description DIODE SCHOTTKY 40V 1A SFLAT Rectifier Diode DIODE SCHOTTKY 40V 1A SFLAT Rectifier Diode
Reach Compliance Code unknown unknown unknown unknown
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor -
Base Number Matches 1 1 - 1

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