TLP184
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP184
Telephone Use Equipment
Programmable Controllers
AC/DC-Input Module
Telecommunication
Unit: mm
The TOSHIBA mini flat coupler TLP184 is a small outline coupler, suitable for
surface mount assembly.
TLP184 consist of a photo transistor, optically coupled to two gallium
arsenide infrared emitting diodes connected inverse parallel, and can operate
directly by AC input current.
•
•
•
•
•
•
•
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 3750 Vrms (min)
Operation Temperature: -55 to 110 °C
UL approved: UL1577, File No. E67349
cUL approved: CSA Component Acceptance Service No. 5A
File No.E67349
CQC approved:GB4943.1,GB8898 Japan and Thailand Factory
TOSHIBA
11-4M1S
Weight: 0.08 g (typ.)
Pin Configuration
(top view)
1
6
4
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
仅适用干海拔
2000m
以下地区安全½用
•
Option (V4) type
VDE approved: EN60747-5-5 ,EN60065,EN60950-1
(Note)
3
Under application EN62368-1
Note: When a EN60747-5-5 approved type is needed,
Please designate “Option(V4)”
•
Construction mechanical rating
Creepage distance
Clearance
Insulation thickness
: 5.0 mm (min)
: 5.0 mm (min)
: 0.4 mm (min)
6: Collector
Start of commercial production
1
2011-12
2017-05-12
TLP184
Current Transfer Ratio
Classification
(Note 1)
Current Transfer Ratio (%)
(I
C
/I
F
)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min
Standard
Rank Y
TLP184
Rank GR
Rank BLL
Rank GB
50
50
100
200
100
Max
400
150
300
400
400
Blank, YE, GR, B, GB
YE
GR
B
GB, GR, BL
Marking of classification
Type
Note1: ex. rank GB: TLP184 (GB,E
Note: Application type name for certification test, please use standard product type name, i.e.
TLP184(GB,E: TLP184
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2017-05-12
TLP184
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
R.M.S. forward current
Forward current derating (Ta≥90°C)
LED
Pulse forward current
Diode power dissipation
Diode power dissipation derating (Ta≥90°C)
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Detector
Collector current
Power dissipation
Power dissipation derating (Ta
≥
25°C)
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage (AC,1 minute, R.H.
≤
60%)
(Note 2)
(Note 1)
Symbol
I
F(RMS)
ΔI
F
/°C
I
FP
△P
D
/°C
P
D
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/°C
T
j
T
opr
T
stg
T
sol
P
T
ΔP
T
/°C
BV
S
Rating
±50
-1.5
±1
100
-2.9
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260
200
-2.0
3750
Unit
mA
mA/°C
A
mW
mW/°C
°C
V
V
mA
mW
mW/°C
°C
°C
°C
°C
mW
mW/°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Pulse width
≤
100
μs,
f=100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Symbol
V
CC
I
F(RMS)
I
C
Min
―
―
―
Typ.
5
16
1
Max
48
20
10
Unit
V
mA
mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2017-05-12
TLP184
Electrical Characteristics
(Ta = 25°C)
Characteristic
LED
Forward voltage
Capacitance
Collector-emitter breakdown voltage
Detector
Emitter-collector breakdown voltage
Collector dark current
Capacitance (collector to emitter)
Symbol
V
F
C
T
V
(BR)CEO
V
(BR)ECO
I
CEO
C
CE
Test Condition
I
F
= ±10 mA
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
Min
1.1
―
80
7
―
―
―
Typ.
1.25
60
―
―
0.01
2
10
Max
1.4
―
―
―
0.08
50
―
Unit
V
pF
V
V
μA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
Rank GB
I
F
= ±1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= ±8 mA
Collector-emitter
saturation voltage
Off-state collector current
CTR symmetry
V
CE(sat)
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
I
C(off)
I
C(ratio)
V
F
= ±0.7 V, V
CE
= 48 V
I
C
(I
F
= -5 mA)/I
C
(I
F
= 5 mA)
(Note 1)
Min
50
100
—
30
—
—
—
—
0.33
Typ.
—
—
60
—
—
0.2
—
1
1
Max
400
%
400
—
%
—
0.3
—
0.3
10
3
μA
—
V
Unit
Current transfer ratio
I
C
/I
F
Saturated CTR
I
C
/I
F(sat)
Note 1: I
C
(ratio)=
IC2 (IF
=
IF2, VCE
=
5V)
IC1(IF
=
IF1, VCE
=
5V)
I
C1
I
F1
I
C2
I
F2
V
CE
4
2017-05-12
TLP184
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 60 s
Isolation voltage
BV
S
AC, 1 s, in oil
DC, 60 s, in oil
Min
―
1×10
10
3750
―
―
Typ.
0.8
10
14
―
10000
10000
Max
―
―
―
―
―
Unit
pF
Ω
V
rms
V
dc
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= ±16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
Test Condition
Min
―
―
―
―
―
―
―
Typ.
5
9
9
9
2
30
70
Max
―
―
―
―
―
―
―
μs
μs
Unit
Fig. 1: Switching time test circuit
I
F
t
s
V
CE
V
CC
4.5V
0.5V
t
on
t
off
I
F
R
L
V
CC
V
CE
5
2017-05-12
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