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BUK9217-75B,118

Description
MOSFET N-CH 75V 64A DPAK
CategoryDiscrete semiconductor    The transistor   
File Size777KB,16 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

BUK9217-75B,118 Overview

MOSFET N-CH 75V 64A DPAK

BUK9217-75B,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeDPAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT428
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresLOGIC LEVEL COMPATIBLE.
Avalanche Energy Efficiency Rating (Eas)147 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (ID)64 A
Maximum drain-source on-resistance0.017 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature185 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)256 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9217-75B
N-channel TrenchMOS logic level FET
Rev. 02 — 3 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
T
j
25 °C; T
j
185 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
Min
-
-
-
-
-
Typ
-
-
-
Max Unit
75
64
167
V
A
W
mΩ
mΩ
total power dissipation T
mb
= 25 °C; see
Figure 2
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 10;
see
Figure 11
I
D
= 64 A; V
sup
75 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
V
GS
= 5 V; I
D
= 25 A; V
DS
= 60 V;
T
j
= 25 °C; see
Figure 12
Static characteristics
13.4 15
14.4 17
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
gate-drain charge
-
-
147
mJ
Dynamic characteristics
Q
GD
-
14
-
nC
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