PC367NJ0000F Series
PC367NJ0000F
Series
Mini-flat Package
High CMR, Low Input Current
Type Photocoupler
■
Description
PC367NJ0000F
contains an IRED optically coupled
to a phototransistor.
It is packaged in a 4-pin mini-flat.
Low input current type.
Input-output isolation voltage(rms) is 3.75kV.
Collector-emitter voltage is 80V and CTR is 100% to
500% at input current of 0.5mA.
■
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No.
PC367)
2. Package resin : UL flammability grade (94V-0)
■
Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
■
Features
1. 4-pin Mini-flat package
2. Double transfer mold package (Ideal for Flow
Soldering)
3. Low input current type (I
F
=0.5mA)
4. High collector-emitter voltage (V
CEO
: 80V)
5. High noise immunity due to high common mode
rejection voltage (CMR : MIN. 10kV/µs)
6. High isolation voltage between input and output
(V
iso(rms)
: 3.75kV)
7. RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A00502FEN
Date Jun. 30. 2005
© SHARP Corporation
PC367NJ0000F Series
■
Internal Connection Diagram
1
1
4
2
3
2
3
4
Anode
Cathode
Emitter
Collector
■
Outline Dimensions
3.6
±0.3
2.54
±0.25
4
3
(Unit : mm)
SHARP mark
"s"
Date code
Anode mark
3 67
1
2
4.4
±0.2
Rank mark
0.4
±0.1
Factory identification mark
Epoxy resin
0.2
±0.05
5.3
±0.3
45˚
0.1
±0.1
2.6
±0.2
6˚
0.5
+0.4
−0.2
7.0
+0.2
−0.7
Product mass : approx. 0.1g
Plating material : SnCu (Cu : TYP. 2%)
Sheet No.: D2-A00502FEN
2
PC367NJ0000F Series
Date code (2 digit)
1st digit
Year of production
A.D
Mark
2002
A
2003
B
2004
C
2005
D
2006
E
2007
F
2008
H
2009
J
2010
K
2011
L
2012
M
·
·
N
·
2nd digit
Month of production
Month
Mark
January
1
February
2
March
3
April
4
May
5
June
6
July
7
August
8
September
9
October
O
November
N
December
D
A.D.
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2001
Mark
P
R
S
T
U
V
W
X
A
B
C
·
·
·
repeats in a 20 year cycle
Factory identification mark
Factory identification Mark
no mark
Japan
Indonesia
China
* This factory marking is for identification purpose only.
Please Contact the local SHARP sales reprsentative to see the actual status of
the production.
Country of origin
Rank mark
Refer to the Model Line-up table
Sheet No.: D2-A00502FEN
3
PC367NJ0000F Series
■
Absolute Maximum Ratings
Parameter
Symbol
I
F
Forward current
*1
Peak forward current
I
FM
Reverse voltage
V
R
P
Power dissipation
Collector-emitter voltage V
CEO
Emitter-collector voltage V
ECO
Collector current
I
C
Collector power dissipation
P
C
Total power dissipation
P
tot
Operating temperature
T
opr
Storage temperature
T
stg
*2
Isolation voltage
V
iso (rms)
*3
Soldering temperature
T
sol
(T
a
=25˚C)
Rating
Unit
10
mA
200
mA
6
V
15
mW
V
80
V
6
mA
50
150
mW
170
mW
−30
to
+100
˚C
−40
to
+125
˚C
3.75
kV
260
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
■
Electro-optical Characteristics
Symbol
Parameter
V
F
Forward voltage
Reverse current
I
R
Terminal capacitance
C
t
Collector dark current
I
CEO
Collector-emitter breakdown voltage BV
CEO
Emitter-collector breakdown voltage BV
ECO
Collector current
I
C
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
Floating capacitance
C
f
t
r
Rise time
Response time
t
f
Fall time
Common mode rejection voltage
CMR
Conditions
I
F
=10mA
V
R
=4V
V=0, f=1kHz
V
CE
=50V,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
E
=10µA,
I
F
=0
I
F
=0.5mA,
V
CE
=5V
I
F
=10mA,
I
C
=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
Output
Input
Input
Output
Transfer
charac-
teristics
V
CE
=2V,
I
C
=2mA,
R
L
=100Ω
T
a
=25˚C,
R
L
=470Ω,
V
CM
=1.5kV(peak)
I
F
=0mA,
V
CC
=9V,
V
np
=100mV
MIN.
−
−
−
−
80
6
0.5
−
5×10
10
−
−
−
10
TYP.
1.2
−
30
−
−
−
−
−
1×10
11
0.6
4
3
−
MAX.
1.4
10
250
100
−
−
2.5
0.2
−
1.0
18
18
−
(T
a
=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
kV/µs
Sheet No.: D2-A00502FEN
4
51mcu
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