DMPH6050SFGQ
60V P-CHANNEL +175° MOSFET
C
PowerDI3333-8
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
BV
DSS
-60V
R
DS(ON)
Max
50mΩ @ V
GS
= -10V
70mΩ @ V
GS
= -4.5V
I
D
Max
T
C
= +25°
C
-18A
-15A
Features and Benefits
Rated to +175° – Ideal for High Ambient Temperature
C
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low R
DS(ON)
– ensures on state losses are minimized
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
PowerDI3333-8
Case: PowerDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
®
S
S
Pin 1
S
G
D
G
D
D
D
D
S
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 5)
Part Number
DMPH6050SFGQ-7
DMPH6050SFGQ-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI3333-8
YYWW
PH5
PowerDI is a registered trademark of Diodes Incorporated.
PH5= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
DMPH6050SFGQ
Document number: DS39560 Rev. 1 - 2
1 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMPH6050SFGQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
ADVANCE INFORMATION
ADVANCED INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) V
GS
= -10V
Continuous Drain Current (Note 8) V
GS
= -10V
Steady
State
Steady
State
T
A
= +25°
C
T
A
= +100°
C
T
C
= +25°
C
T
C
= +100°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
SM
I
AS
E
AS
Value
-60
±20
-6.1
-4.2
-18
-12
-32
-2
-32
-24.8
30.8
Unit
V
V
A
A
A
A
A
A
mJ
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 9) L = 0.1mH
Avalanche Energy (Note 9) L = 0.1mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
1.2
125
85
2.8
54
37
6
-55 to +175
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°
C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-60
—
—
-1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
41
52
-0.7
1293
86.3
64.7
12
11.9
24.1
3.6
5.7
4.3
6.3
46.7
25.3
13.6
7.4
Max
—
-1
±100
-3
50
70
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -7A
V
GS
= -4.5V, I
D
= -7A
V
GS
= 0V, I
S
= -1A
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -30V, I
D
= -5A
V
DS
= -30V, V
GS
= -10V,
R
G
= 3Ω, I
D
= -5A
I
F
= -5A, di/dt = 100A/μs
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Thermal resistance from junction to soldering point (on the exposed drain pad).
9. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMPH6050SFGQ
Document number: DS39560 Rev. 1 - 2
2 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMPH6050SFGQ
30
V
GS
= -10V
30
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -5.0V
25
25
V
DS
= -5.0V
ADVANCE INFORMATION
ADVANCED INFORMATION
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
20
20
15
V
GS
= -3.5V
15
T
A
= 175°
C
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
10
10
5
V
GS
= -3.0V
V
GS
= -2.8V
5
T
A
= 25°
C
0
0
2
3
4
V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
1
5
0
1
T
A
= -55°
C
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.090
0.080
0.070
0.060
V
GS
= -4.5V
0.050
V
GS
= -10V
0.040
0.030
0
O
(
S
D
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
30
R
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
2
4
6
8 10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
20
I
D
= -5A
I
D
= -7A
O
(
S
D
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
V
GS
= -10V
0.09
0.08
T
A
= 175°
C
T
A
= 150°
C
T
A
= 125°
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
(Normalized)
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.1
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°
C)
Figure 6 On-Resistance Variation with Temperature
-25
V
GS
= -4.5V
I
D
= -7A
V
GS
= -10V
I
D
= -7A
0.07
T
A
= 85°
C
0.06
0.05
0.04
0.03
0.02
0.01
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
T
A
= -55°
C
T
A
= 25°
C
O
(
S
D
DMPH6050SFGQ
Document number: DS39560 Rev. 1 - 2
3 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMPH6050SFGQ
0.11
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
-50
-25
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= -4.5V
I
D
= -7A
V
GS
= -10V
I
D
= -7A
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
2.6
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
H
V
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°
C)
Figure 8 Gate Threshold Variation vs.
Junction Temperature
I
D
= -250µA
I
D
= -1mA
ADVANCE INFORMATION
ADVANCED INFORMATION
T
(
S
G
30
V
GS
= 0V
100000
T
A
= 175°
C
T
A
= 175°
C
T
A
= 150°
C
T
A
= 125°
C
25
)
A
(
T
N
E
R
R
U
C
E
C
R
U
O
S
,
s
I
I
S
, SOURCE CURRENT (A)
I
DSS
, LEAKAGE CURRENT (nA)
20
15
10
T
A
= 85°
C
10000
)
A
n
(
T
N 1000
E
R
R
U
C
100
E
G
A
K
A
10
E
L
,
S
I
S
D
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
5
0
0
1
0.1
0
T
A
= 25°
C
T
A
= -55°
C
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakage Current
vs. Voltage
5
10000
)
F
p
(
E
C
N
A
T
I
C
A
P
A
C
N
O
I
T
C
N
U
J
,
T
C
10
V
GS
GATE THRESHOLD VOLTAGE (V)
f = 1MHz
C
T
, JUNCTION CAPACITANCE (pF)
8
V
DS
= -30V
I
D
= -5A
C
iss
1000
6
4
100
C
oss
C
rss
2
10
0
0
5
20
25
30
35
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
40
0
4
8
12
16
20
24
Q
g
, TOTAL GATE CHARGE (nC)
Figure 12 Gate Charge
28
DMPH6050SFGQ
Document number: DS39560 Rev. 1 - 2
4 of 7
www.diodes.com
March 2017
© Diodes Incorporated
DMPH6050SFGQ
100
R
DS(on)
Limited
P
W
= 100µs
ADVANCE INFORMATION
ADVANCED INFORMATION
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
,
d
I
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
C
0.1
T
J(max)
= 175°
T
A
= 25°
C
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 10ms
P
W
= 1ms
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
100
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
thja
(t) = r(t) * R
thja
Single Pulse
0.001
0.0001
R
thja
= 125°
C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
DMPH6050SFGQ
Document number: DS39560 Rev. 1 - 2
5 of 7
www.diodes.com
March 2017
© Diodes Incorporated
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