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BUK9Y19-75B,115

Description
MOSFET N-CH 75V 48.2A LFPAK
CategoryDiscrete semiconductor    The transistor   
File Size717KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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BUK9Y19-75B,115 Overview

MOSFET N-CH 75V 48.2A LFPAK

BUK9Y19-75B,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOIC
package instructionFLANGE MOUNT, R-PSFM-T4
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codenot_compliant
Factory Lead Time26 weeks
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)121 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage75 V
Maximum drain current (ID)48.2 A
Maximum drain-source on-resistance0.019 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)192 A
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BUK9Y19-75B
N-channel TrenchMOS logic level FET
Rev. 04 — 13 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
Engine management
General purpose power switching
Motors, lamps and solenoids
Transmission control
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
75
V
48.2 A
106
W
Static characteristics
R
DSon
V
GS
= 5 V; I
D
= 20 A;
T
j
= 25 °C; see
Figure 13
V
GS
= 10 V; I
D
= 20 A;
T
j
= 25 °C
-
-
15.9 19
14.7 18
mΩ
mΩ
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