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TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
November 2014
TIP31A / TIP31C
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complementary to TIP32 Series
1
TO-220
2.Collector
3.Emitter
1.Base
Ordering Information
Part Number
TIP31A
TIP31C
TIP31CTU
Top Mark
TIP31A
TIP31C
TIP31C
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Junction Temperature
Parameter
TIP31A
TIP31C
TIP31A
TIP31C
Value
60
100
60
100
5
3
5
1
150
-65 to 150
Unit
V
V
V
A
A
A
°C
°C
Storage Temperature Range
© 2000 Fairchild Semiconductor Corporation
TIP31A / TIP31C Rev. 1.1.0
www.fairchildsemi.com
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
Thermal Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
P
C
Parameter
Collector Dissipation (T
A
= 25°C)
Collector Dissipation (T
C
= 25°C)
Value
2
40
Unit
W
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CEO
(sus)
I
CEO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Sustaining
Voltage
(1)
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
(1)
Current Gain Bandwidth Product
TIP31A
TIP31C
TIP31A
TIP31C
TIP31A
TIP31C
Conditions
I
C
= 30 mA, I
B
= 0
V
CE
= 30 V, I
B
= 0
V
CE
= 60 V, I
B
= 0
V
CE
= 60 V, V
EB
= 0
V
CE
= 100 V, V
EB
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 4 V, I
C
= 1 A
V
CE
= 4 V, I
C
= 3 A
I
C
= 3 A, I
B
= 375 mA
V
CE
= 4 V, I
C
= 3 A
V
CE
= 10 V, I
C
= 500 mA,
f = 1 MHz
Min.
60
100
Max.
Unit
V
0.3
0.3
200
200
1
25
10
50
1.2
1.8
3.0
mA
μA
mA
V
V
MHz
Note:
1. Pulse test: pw
≤
300
μs,
duty cycle
≤
2%.
© 2000 Fairchild Semiconductor Corporation
TIP31A / TIP31C Rev. 1.1.0
www.fairchildsemi.com
2
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
1000
10000
V
CE
= 4V
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
100
1000
V
BE
(sat)
10
100
V
CE
(sat)
1
1
10
100
1000
10000
10
1
10
100
1000
10000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
10
50
I
C
(MAX) (PULSE)
45
I
C
[A], COLLECTOR CURRENT
I
C
(MAX) (DC)
s
5m
s
1m
P
C
[W], POWER DISSIPATION
100
μ
s
40
35
30
25
20
15
10
5
0
1
TIP31 V
CEO
MAX.
TIP31A V
CEO
MAX.
TIP31B V
CEO
MAX.
TIP31C V
CEO
MAX.
0.1
10
100
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
© 2000 Fairchild Semiconductor Corporation
TIP31A / TIP31C Rev. 1.1.0
www.fairchildsemi.com
3
Embedded System
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