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GP2D005A120C

Description
DIODE SCHOTTKY 1.2KV 5A DPAK-2
Categorysemiconductor    Discrete semiconductor   
File Size537KB,3 Pages
ManufacturerGlobal Communications
Environmental Compliance
Download Datasheet Parametric View All

GP2D005A120C Overview

DIODE SCHOTTKY 1.2KV 5A DPAK-2

GP2D005A120C Parametric

Parameter NameAttribute value
Diode typeSilicon carbide Schottky
Voltage - DC Reverse (Vr) (Maximum)1200V
Current - average rectification (Io)5A
Voltage at different If - Forward (Vf1.8V @ 5A
speedNo recovery time > 500mA (Io)
Reverse recovery time (trr)0ns
Current at different Vr - Reverse leakage current10µA @ 1200V
Capacitance at different Vr, F317pF @ 1V,1MHz
Installation typesurface mount
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
Supplier device packagingTO-252-2L(DPAK)
Operating Temperature - Junction-55°C ~ 175°C
GP2D005A120C
1200V SiC Schottky Diode
Amp+
TM
Features
High surge current capable
Zero reverse recovery current
High bandwidth
Fast, temperature-independent switching
Amp+
TM
Benefits
Unipolar rectifier
VDC
Q
C
I
F
1200 V
22 nC
5 A
Amp+
TM
Applications
Motor drives
Zero switching loss
Higher efficiency
Smaller heat sink
Parallel devices with thermal stability
Part #
GP2D005A120C
Switch mode power supplies
Power factor correction
Package
TO-252-2L
(DPAK)
Marking
2D005A120
Maximum Rating
Symbol
Conditions
T
C
=25 °C, T
j
=175 °C
Value
17
10
6
40
25
100
7
3
1200
50
100
-55…175
260
1
Unit
Continuous forward current
Surge non-repetitive forward current
sine halfwave
Non-repetitive peak forward current
i
2
t
value
Repetitive peak reverse voltage
Diode
dv/dt
ruggedness
Power dissipation
Operating & storage temperature
Soldering temperature
Mounting torque
I
F
T
C
=125 °C, T
j
=175 °C
T
C
=150 °C, T
j
=175 °C
T
C
=25 °C, t
p
=8.3 ms
T
C
=150 °C, t
p
=8.3 ms
T
C
=25 °C, t
p
=10
ms
T
C
=25 °C, t
p
=8.3 ms
T
C
=150 °C, t
p
=8.3 ms
T
j
=25 °C
Turn-on slew rate, repetitive
A
I
F,SM
I
F,max
i
2
dt
V
RRM
dv/dt
P
tot
T
J
, T
storage
T
solder
A
2
s
V
V/ns
W
°C
°C
N-m
T
C
=25 °C
Continuous
Wave soldering leads
M3 Screw
Electrical Characteristics,
at T
j
=25 °C, unless otherwise specified
Static Characteristics
DC blocking voltage
Diode forward voltage
Reverse current
Symbol
V
DC
V
F
I
R
Conditions
I
R
=0.1mA
I
F
=5A, T
j
=25
o
C
I
F
=5A, T
j
=175 C
V
R
=1,200V, T
j
=25 C
V
R
=1,200V, T
j
=175 C
o
o
o
min.
1200
-
-
-
-
Values
typ.
-
1.60
2.20
1.0
30
max.
-
1.80
2.70
10
300
Unit
V
m
A
8/27/2015
Rev 2
www.gptechgroup.com
p.1

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