STGW40NC60V
N-CHANNEL 50A - 600V - TO-247
Very Fast PowerMESH™ IGBT
Table 1: General Features
TYPE
STGW40NC60V
s
s
Figure 1: Package
I
C
@100°C
50 A
V
CES
600 V
V
CE(sat)
(Max)
@25°C
< 2.5 V
s
s
s
s
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO
50 KHz
LOSSES INCLUDE DIODE RECOVERY
ENERGY
OFF LOSSES INCLUDE TAIL CURRENT
LOWER C
RES
/ C
IES
RATIO
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
3
2
1
TO-247
Weight: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm
2
Figure 2: Internal Schematic Diagram
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
™
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
APPLICATIONS
s
HIGH FREQUENCY INVERTERS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s
UPS
s
MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
STGW40NC60V
MARKING
GW40NC60V
PACKAGE
TO-247
PACKAGING
TUBE
Rev. 10
July 2004
1/10
STGW40NC60V
Table 3: Absolute Maximum ratings
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(1)
P
TOT
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at 25°C (#)
Collector Current (continuous) at 100°C (#)
Collector Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Storage Temperature
Operating Junction Temperature
Value
600
20
± 20
80
50
200
260
2.08
– 55 to 150
Symbol
V
V
V
A
A
A
W
W/°C
°C
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Rthj-case
Rthj-amb
T
L
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
Typ.
Max.
0.48
50
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
V
BR(CES)
I
CES
Parameter
Collectro-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current (V
CE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
Test Conditions
I
C
= 1 mA, V
GE
= 0
V
GE
= Max Rating
Tc=25°C
Tc=125°C
V
GE
= ± 20 V , V
CE
= 0
Min.
600
Typ.
Max.
Unit
V
10
1
± 100
µA
mA
nA
I
GES
Table 6: On
Symbol
V
GE(th)
V
CE(SAT)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V,
V
GE
= 15 V,
Tj= 125°C
I
C
= 40A, Tj= 25°C
I
C
= 40A,
Min.
3.75
1.9
1.7
Typ.
Max.
5.75
2.5
Unit
V
V
V
(#) Calculated according to the iterative formula:
T
–T
JMAX
C
-
I
(
T
)
= -------------------------------------------------------------------------------------------------
C C
R
×
V
(T
,
I )
THJ – C
CESAT
(
M AX
)
C C
2/10
STGW40NC60V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
g
fs
(1)
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
Test Conditions
V
CE
= 15 V
,
I
C
= 20 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
20
4550
350
105
214
30
96
200
Max.
Unit
S
pF
pF
pF
nC
nC
nC
A
V
CE
= 390 V, I
C
= 40 A,
V
GE
= 15V,
(see Figure 20)
V
clamp
= 480 V
,
Tj = 150°C
R
G
= 100
Ω,
V
GE
= 15V
Test Conditions
V
CC
= 390 V, I
C
= 40 A
R
G
= 3.3Ω, V
GE
= 15V, Tj= 25°C
(see Figure 18)
V
CC
= 390 V, I
C
= 40 A
R
G
= 3.3Ω, V
GE
= 15V, Tj=
125°C
(see Figure 18)
Table 8: Switching On
Symbol
t
d(on)
t
r
(di/dt)
on
Eon (2)
t
d(on)
t
r
(di/dt)
on
Eon (2)
Parameter
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Min.
Typ.
43
17
2060
330
42
19
1900
640
Max.
Unit
ns
ns
A/µs
µJ
ns
ns
A/µs
µJ
450
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off
Symbol
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(3)
E
ts
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(3)
E
ts
Parameter
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Turn-off Switching Loss
Total Switching Loss
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Turn-off Switching Loss
Total Switching Loss
V
cc
= 390 V, I
C
= 40 A,
R
GE
= 3.3
Ω
, V
GE
= 15 V
Tj = 125 °C
(see Figure 18)
Test Conditions
V
cc
= 390 V, I
C
= 40 A,
R
GE
= 3.3
Ω
, V
GE
= 15 V
T
J
= 25 °C
(see Figure 18)
Min.
Typ.
25
140
45
720
1050
60
170
77
1400
2040
970
1420
Max.
Unit
ns
ns
ns
µ
J
µ
J
ns
ns
ns
µ
J
µ
J
(3)Turn-off losses include also the tail of the collector current.
3/10
STGW40NC60V
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 8: Normalized Gate Threshold vs Tem-
perature
4/10
STGW40NC60V
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temper-
ature
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 14: Total Switching Losses vs Collector
Current
5/10
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