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STC08IE120HP

Description
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
CategoryDiscrete semiconductor    The transistor   
File Size269KB,11 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

STC08IE120HP Overview

Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm

STC08IE120HP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-247
package instructionROHS COMPLIANT PACKAGE-4
Contacts3
Reach Compliance Codecompli
Maximum collector current (IC)8 A
ConfigurationSINGLE WITH BUILT-IN FET AND DIODE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)48 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STC08IE120HP
Emitter Switched Bipolar Transistor
ESBT 1200 V - 8 A - 0.10
General features
V
CS(ON)
0.8 V
I
C
8A
R
CS(ON)
High voltage / high current Cascode
configuration
Low equivalent on resistance
very fast-switch up to 150 kHz
Squared RBSOA up to 1200V
Very low C
iss
driven by R
G
= 47Ω
Very low turn-off cross over time
Applications
Flyback / forward SMPS
Buck-boost converter
Description
The STC08IE120HP is manufactured in Monolith-
ic ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage
applications.
It is designed for use in Gate Driven based topolo-
gies.
Order codes
Part Number
STC08IE120HP
Marking
C08IE120HP
Package
TO247-4LHP
Packing
Tube
October 2006
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
W
0.10
Internal schematic diagrams
Rev 1
®
Preliminary Data
TO247-4L HP
1/11
www.st.com
11

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STC08IE120HP C08IE120HP
Description Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
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