This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD0946A, 2SD0946B
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■
Features
•
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
•
A shunt resistor is omitted from the driver.
■
Package
•
Code
TO-126B-A1
•
Pin Name
1: Emitter
2: Collector
3: Base
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
2SD0946A
2SD0946B
Collector-emitter voltage 2SD0946A
(Base open)
2SD0946B
Emitter-base voltage (Collector open)
Collector current
V
EBO
I
C
I
CP
P
C
T
j
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
2SD0946B
tin
ue
2SD0946A
/D
Collector-emitter voltage
(Base open)
2SD0946B
isc
2SD0946A
an
ce
Emitter-base voltage (Collector open)
V
EBO
I
CBO
I
EBO
h
FE
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
Transition frequency
*1
V
CE(sat)
V
BE(sat)
f
T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Rating
60
Unit
V
100
50
M
ain
Di
sc te
on na
tin nc
ue e/
d
■
Absolute Maximum Ratings
T
a
=
25°C
V
80
5
1
■
Internal Connection
B
C
V
A
≈
200
Ω
E
1.5
1.2
A
W
150
°C
−55
to
+150
°C
Conditions
Min
60
Typ
Max
Unit
V
I
C
=
100
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
100
50
on
V
80
5
I
E
=
100
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
0.1
µA
V
V
Ma
int
en
0.1
µA
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
4 000
40 000
1.8
2.2
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
150
MHz
Publication date: August 2008
SJD00164DED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
NXP MCU
京公网安备 11010802033920号
EEWORLD
