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BDX34/A/B/C
BDX34/A/B/C
Power Linear and Switching Applications
• High Gain General Purpose
• Power Darlington TR
• Complement to BDX33/33A/33B/33C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BDX34
: BDX34A
: BDX34B
: BDX34C
V
CEO
Collector-Emitter Voltage
: BDX34
: BDX34A
: BDX34B
: BDX34C
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
- 10
- 15
- 0.25
70
150
- 65 ~ 150
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
I
C
I
CP
I
B
P
C
T
J
T
STG
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX34/A/B/C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDX34
: BDX34A
: BDX34B
: BDX34C
* Collector-Emitter Sustaining Voltage
: BDX34
: BDX34A
: BDX34B
: BDX34C
* Collector-Emitter Sustaining Voltage
: BDX34
: BDX34A
: BDX34B
: BDX34C
Collector Cut-off Current
: BDX34
: BDX34A
: BDX34B
: BDX34C
I
CEO
Collector Cut-off Current
: BDX34
: BDX34A
: BDX34B
: BDX34C
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
: BDX34/34A
: BDX34B/34C
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BDX34/34A
: BDX34B/34C
* Base-Emitter ON Voltage
: BDX34/34A
: BDX34B/34C
* Parallel Diode Forward Voltage
V
CE
= - 3V, I
C
= - 4A
V
CE
= - 3V, I
C
= - 3A
I
C
= - 4A, I
B
= - 8mA
I
C
= - 3A, I
B
= - 6mA
V
CE
= - 3V, I
C
= - 4A
V
CE
= - 3V, I
C
= - 3A
I
F
= - 8A
750
750
- 2.5
- 2.5
- 2.5
- 2.5
-4
V
V
V
V
V
V
CE
= - 22V, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
=0
V
CE
= - 50V, I
B
= 0
V
EB
= - 5V, I
C
= 0
- 0.5
- 0.5
- 0.5
- 0.5
-5
mA
mA
mA
mA
mA
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 0.2
- 0.2
- 0.2
- 0.2
mA
mA
mA
mA
Test Condition
I
C
= -100mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
Typ.
Max.
Units
V
V
V
V
V
V
V
V
V
V
V
V
V
CER
(sus)
I
C
= -1 00mA, I
B
= 0
R
BE
= 100Ω
V
CEV
(sus)
I
C
= - 100mA, I
B
= 0
V
BE
= - 1.5V
I
CBO
V
BE
(on)
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX34/A/B/C
Typical Characteristics
100k
-10
10k
V
CE
(sat) [V], SATURATION VOLTAGE
V
CE
= -3V
I
C
= 250I
B
h
FE
, DC CURRENT GAIN
-1
1k
100
-0.1
-1
-10
-0.1
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
-10.0
1000
V
CE
= -3V
f = 1MHz
I
E
= 0
I
C
[A], COLLECTOR CURRENT
-5.0
C
ob
[pF], CAPACTIANCE
-0
-1
-2
-3
-4
-7.5
100
-2.5
-0.0
10
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Output Capacitance
-100
80
70
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (Pulsed) 5 ms 1 ms 100 us
-10
P
D
[W], POWER DISSIPATION
10 us
60
50
I
C
MAX. (Continuous)
DC
40
30
-1
BDX34
BDX34A
BDX34B
BDX34C
-0.1
-1
-10
-100
-1000
20
10
0
0
25
50
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Tc [ C], CASE TEMPERATURE
o
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Industrial Control Electronics
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